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Fabrication and design of nanoscale regular circuits

Mohamed Haykel Ben Jamaa

During many decades, Moore's law, which predicts an exponential increase in performance of semiconductor logic circuits and memories and an exponential decrease in their area, has proven its universal validity. It also helped the semiconductor industry pre ...

EPFL2009

Quadratic backward propagation of variance for nonlinear statistical circuit modeling

Ivica Stevanovic

Accurate statistical modeling and simulation are keys to ensure that integrated circuits (ICs) meet specifications over the stochastic variations inherent in IC manufacturing technologies. Backward propagation of variance (BPV) is a general technique for s ...

2009

Semiconductor device and method of manufacturing a semiconductor device

Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund

The local bending of a silicon nanowire induces tensile strain in the wire due to the stretching of the silicon lattice. This in turn enhances the mobility of the free carriers (electrons) in the direction of transport along the wire. Thus, for example, wh ...

2009

Physical aspects of colossal dielectric constant material CaCu3Ti4O12 thin films

Paul Muralt

The underlying physical mechanism of the so-called colossal dielectric constant phenomenon in CaCu3Ti4O12 CCTO thin films were investigated by using semiconductor theories and methods. The semiconductivity of CCTO thin films originated from the acceptor de ...

2009

Nanogap MEM resonators on SOI

Nicoleta-Diana Ciressan

Today's consumer electronics based on a large variety of time-keeping and frequency reference applications is based on quartz-crystal oscillators, because of their excellent performances in terms of quality factor, thermal and frequency stability. However, ...

EPFL2009

Micromirrors for integrated tunable mid-infrared detectors and emitters

Niels Quack

The mid-infrared range is of interest in spectroscopic applications, due to the large number of organic compounds that exhibit characteristic absorption bands in this spectral region. Semiconductor technology, however, has been developed mainly for the nea ...

ETH2009

III-nitride based microcavities

Gabriel Christmann

This PhD thesis work describes the study of III-nitride based planar microcavities operating in the strong coupling regime at room temperature. The aim is to use the nonlinear emission properties of such samples in realistic devices. Furthermore these stud ...

EPFL2009

Semiconductor Image Sensing

Peter Seitz, Nicolas Blanc

Silicon is an excellent detector material for electromagnetic radiation in the wavelength range of 0.1 to 1000 nm. In the visible spectral range (400-700 nm), external quantum efficiencies approaching 100% are obtained. When combined with the amazing minia ...

Springer2008

Semiconductor device for measuring ultra small electrical currents and small voltages

Radivoje Popovic, Marc Lany

A semiconductor device for measuring ultra low currents down to the level of single electrons or low voltages comprises a first and a second voltage supply terminal (1, 2), an input terminal (3) for receiving an electrical current or being supplied with a ...

2008

Submonolayer growth of cobalt on metallic and insulating surfaces studied by scanning tunneling microscopy and kinetic Monte-Carlo simulations

Philipp Buluschek

Submonolayer epitaxial growth is obtained by the deposition of less than a complete layer of atoms on a single crystal surface. It is of fundamental interest for industrial applications (e.g. in the semiconductor industry) as well as from the point of view ...

EPFL2008