Farzan JazaeriFarzan Jazaeri received his M.Sc. degree in 2009 from University of Tehran and his Ph.D. in electronic engineering from EPFL in 2015. He has been serving as Research Scientist at EPFL since 2015 and Senior RD Semiconductor Device Engineer in the Swatch Company since 2019.He is a recipient of the 2018 Electron Devices Society George E. Smith Award, the best talk award from MIXDES 2019 and the best paper awards from ESSDERC2018 and ESSDERC2019, and several other academic awards. He is also awarded an advanced Swiss National Science Foundation grant for two years fellowship in MIT and NASA. His doctoral thesis was recognized to be eligible for the IBM award in 2017. Dr. Jazaeri is currently research scientist and project leader in high level of international scientific collaborative activities at EPFL. His research activities on solid-state physics are focused on creation of the cryogenic temperature infrastructure necessary to operate the qubits for quantum computations(MOSQUITO), radiation-induced damages in advanced devices for the future high energy physics experiments at CERN (GigaRadMOST), Pinned Photodiodes for CIS, and modeling and characterization AlGaN-GaN heterostructure in collaboration with IMEC. Together with Dr. Sallese, he is the lead developer of EPFL HEMT MODEL for GaN HEMTs. He fully developed a new model (EPFL-JL Model) for the so-called nanowire FETs and was invited by Cambridge University Press to write a book on junctionless nanowire FETs, emerging nanoelectronic devices, already published since 2018. He serves as lead editor and reviewer for several scientific journals. He has been an invited keynote speaker at several international conferences and events. He is invited to MIXDES 2019 as a keynote speaker to address quantum bits and quantum computing architecture.From Jun 2009 to February 2010, he worked on designing and implementing SD/HD broadcast systems with SAMIM-RAYANEH Co., Tehran, Iran. Between March 2010 and November 2011 he worked as a SCADA expert in Tehran Regional Electric Co. (TREC), Tehran, Iran. From September 2010 to December 2011, he continued his research activities in nano-electronics in Tehran, Iran. In December 2011, he joined to Electron Device Modelling and Technology Lab (EDLab) and pursued his Ph.D. degree at EPFL. In 2015, he received his Ph.D. from Microsystems and Microelectronics department, Integrated Systems Laboratory (STI/IC) at EPFL, Lausanne, Switzerland.
Luis Guillermo Villanueva TorrijoGuillermo Villanueva is a Tenure Track Assistant Professor at the Ecole Polytechnique Federale de Lausane (EPFL), Switzerland, in the Mechanical Engineering Institute (IGM). Before joining EPFL he was a Marie Curie post-doctoral scholar at DTU (Denmark) and Caltech (California, US); and before a post-doc at EPFL-LMIS1. He received his M.Sc. in Physics in Zaragoza (Spain) and his PhD from the UAB in Barcelona (Spain).
Since the start of his PhD (2002), Prof. Villanueva has been active in the fields of NEMS/MEMS for sensing, having expertise from the design and fabrication to the characterization and applicability. He has co-authored more than 75 papers in peer-reviewed journals (h-index of 24 WoK, 32 GoS) and more than 100 contributions to international conferences.
He is serving, or has served, on the program committees of IEEE-NEMS, IEEE-Sensors, MNE, IEEE-FCS and Transducers. He is editor of Microelectronic Engineering. He has co-organized MNE2014 and SNC2015; and he is currently co-organizing the short courses at Transducers 2019 and the 16th International Workshop on Nanomechanical Sensors (NMC2019).
