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Water- and O-sensitive compds. (tBu3SiEX2)2, tBu3SiEX2.Do, and (tBu3Si)2EX (E = Al, Ga, In; X = (F), Cl, Br; Do = OR2, NR3) were synthesized by reaction of EX3 with tBu3SiNa in the absence or presence of donors. In addn., (tBu3Si)AlBr2, (tBu3Si)2InF, and t ...
By comparing a kinetic and a thermal-equilibrium theory of polariton Bose-Einstein condensation, we study under what conditions the dynamical condensation under steady-state non-resonant pumping can approach thermal equilibrium. In particular, we study the ...
The threshold pressure P-0 for infiltration of Al-12 wt.% Si alloy into compacts of mixtures of alumina and silicon carbide particles having largely different size is investigated. The results are in line with those recently derived from infiltrations of A ...
This thesis presents a theoretical description of the phase transition, with formation of long-range spatial coherence, occurring in a gas of exciton-polaritons in a semiconductor microcavity structure. The results and predictions of the theories developed ...
An atomic streak camera has been constructed that operates from the near to the far infrared. The photocathode used in conventional streak cameras for the conversion of photons to electrons has been replaced by gas-phase atoms in a Rydberg state. The low b ...
First, spectroscopic ellipsometry (SE) is carried out at 300 K together with reflectivity measurements versus temperature from 4 to 300 K, in order to determine the temperature dependence of the refractive index of h-GaN films in the transparent region (35 ...
The concept of field-effect transistor with ferroelectric gate in combination with the advanced technique of direct domain writing is applied for modulation of transport properties of 2D electron gas located close to the interface in a GaN/AlGaN heterostru ...
We have optimized laser ablation thin film deposition and transfer procedures within synchrotron vault, specifically to perform angle-integrated and angle-resolved photoemission spectroscopy (ARPES) on high-T-c and related films without cleaving the sample ...
The concept of a field-effect transistor with ferroelectric gate has been implemented using the GaN/AlGaN heterostructure combined with Pb(Zr,Ti)O-3 ferroelectric layer. The processing conditions were optimized in a way to obtain textured Pb(Zr,Ti)O-3 film ...
An aq. soln. of peroxynitrous acid has been studied using first-principles mol. dynamics simulations based on d. functional theory. The relative Helmholtz energies of different conformers have been detd. via thermodn. integration with constraints. At contr ...