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The aim of this thesis is twofold: on the one hand to demonstrate a new method of building magnetic nanostructures at surfaces and on the other hand to present the construction of a new 1K UHV Low Temperature STM aimed at coupling the spatial resolution of ...
The atomic force microscopy in ultrahigh vacuum and at low temperature demonstrated its excellent capability to reach atomic resolution. Nevertheless in the case of biological samples high resolution has been achieved only in very few cases. We demonstrate ...
Properties of ultra-thin films are different from their single crystal counterparts due to the presence of (substrate induced) strain, different degree and type of (growth induced) disorder and different average doping (distribution of oxygen vacancies, fo ...
Halogenated organic compounds are common pollutants in groundwater. Consequently, there is widespread interest in understanding the reactions of these compounds in the environment and developing remediation strategies. One area of ongoing research involves ...
This paper suggests a new fabrication method for surface micromachining based on porous silicon formation followed by electropolishing. in contrast to its known use as a sacrificial layer, in this work, porous silicon will be employed as constitutive mater ...
We present an atomic force microscope ~AFM for operation at low temperatures under ultrahigh vacuum conditions. It uses the laser beam deflection method to measure the bending of the cantilever. The four quadrant photodiode allows the detection of vertical ...
We report about a new process we have developed to fabricate miniaturized double layer octupoles that can be operated as electrostatic scanner/stigmators for charged particle beams. The fabrication process is based on deep reactive ion etching (DRIE) and a ...
Reliable split C(V) measurements are shown to be feasible on ultra-thin oxides (down to 1.2 nm) by using relatively small area MOSFETs (typically 100 mum(2)). To this end, specific correction procedures for parasitic parallel capacitances and gate leakage ...
The paper presents room temperature photoreflectance measurements carried out on the Au/ultrathin Si/n-crystalline GaAs structure with the silicon interlayer thickness gradually changing from about 4-27 Angstrom prepared in situ under ultra-high-vacuum con ...
Dust particle contamination is known to be responsible for reduced quality and yield in microelectronic processing. However it may also limit the operation of particle accelerators as a result of beam lifetime reduction or enhanced field emission in radio- ...
