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The requirements of present high-performance power electronic systems are exceeding the power density, efficiency, and reliability of silicon-based devices. Silicon carbide (SiC) is a candidate of choice for high-temperature, high-speed, high-frequency, an ...
Intrinsic hydrogenated amorphous silicon (a-Si:H) films can yield in outstanding electronic surface passivation of crystalline silicon (c-Si) wafers as utilized in the HIT (heterojunction with intrinsic thin layer) solar cells. We have studied the correlat ...
High efficiency Si heterojunction (HJ) solar cells must exhibit low interface recombination, as it limits the cell open circuit voltage (VOC). The study of the interface recombination of various a-Si:H/c-Si lifetime test samples gives insight into the reco ...
During atomic layer deposition of high permittivity (high-k) metal oxide gate dielectrics, an interfacial layer (IL) containing SiOx between high-k dielectric and Si substrate is almost unavoidable. However, an Al(CH3)(3) (TMA) pretreatment for 3600 s on H ...
We review the structural and hyperfine properties of Si dangling bond defects occurring in amorphous SiO2 and at various Si-SiO2 interfaces. These defects have in common a singly occupied orbital on a, trivalent Si Centre. We first briefly summarize the mo ...
The fluorine incorporation into HfO2 with oxygen vacancies has been investigated using first principles calculations. The authors show that atomic fluorine can efficiently passivate the neutral oxygen vacancy with excess energies of 4.98 and 4.39 eV for th ...
The concept of field-effect transistor with ferroelectric gate in combination with the advanced technique of direct domain writing is applied for modulation of transport properties of 2D electron gas located close to the interface in a GaN/AlGaN heterostru ...
We study the electronic structure and the dielectric permittivity of ultrathin oxide layers on Si(I 00) substrates. By considering two different Si(l 00)-SiO2 interface models, we first show that the electronic structure in the interfacial oxide differs fr ...
The performance of many silicon devices is limited by electronic recombination losses at the crystalline silicon (c-Si) surface. A proper surface passivation scheme is needed to allow minimizing these losses. The surface passivation properties of amorphous ...
We study the interfacial electronic properties of a model Si-SiO2-Si structure which is intended to simulate the substrate-oxide-polysilicon stack in metal-oxide-semiconductor devices. The structural properties of this model are shown to match closely thos ...
