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In this work we propose a phenomenological microscopic approach to deal with pseudoinductive charge-relaxation processes (named also as negative capacitance phenomena) in organic molecules (tris-8-hydroxyquinoline-aluminum) and polymeric [poly(2-metoxy-5-( ...
We study the electronic structure and the dielectric permittivity of ultrathin oxide layers on Si(I 00) substrates. By considering two different Si(l 00)-SiO2 interface models, we first show that the electronic structure in the interfacial oxide differs fr ...
In their article, ‘‘AC frequency characteristics of coplanar impedance sensors as design parameters’’, Hong et al.1 present an analytical model for the calculation of the resistance between two electrodes in a microchannel. However, their measurements fit ...
Summary form only given as follows. A model for the calculation of lightning-induced voltages is presented with the aim of assessing the effect of corona when power distribution lines are illuminated by lightning electromagnetic fields. Corona is taken int ...
This work deals with the concept of active materials with variable acoustic properties, dedicated to room acoustics applications. This concept is based on an acoustic impedance active control principle by hybrid motionnal feedback, applied on an electroaco ...
In this work, dielec. spectroscopy was used to monitor two CHO perfusion culture expts. (B14 and B16). The capacitance of the cell suspension was recorded every 20 min over an excitation frequency range of 0.2 MHz to 10.0 MHz. A phase plot of the capacitan ...
Supercapacitors are components for energy storage. Due to their series resistors, the energy efficiency of supercapacitors can be low. In this paper, the unloading of supercapacitors with constant current and power are studied, to identify and take into ac ...
The ground impedance matrix elements of a multiconductor overhead transmission line do not have analytical inverse Fourier transforms in the time domain. Thus, in general, the ground transient resistance matrix elements are to be determined numerically. Us ...
This work reports on the analysis of high voltage lateral devices. Two different architectures, self-aligned LDMOS and non-self-aligned XDMOS are presented and used in this work. For the separation of the physical effects that take place inside the HV devi ...
Reliable split C(V) measurements are shown to be feasible on ultra-thin oxides (down to 1.2 nm) by using relatively small area MOSFETs (typically 100 mum(2)). To this end, specific correction procedures for parasitic parallel capacitances and gate leakage ...
