Publications associées à Memristor

Emulating Multimemristive Behavior of Silicon Nanowire-Based Biosensors by Using CMOS-Based Implementations

Sandro Carrara, Junrui Chen, Kapil Bhardwaj

The research presented in this article draws inspiration from previous efforts aimed at replicating the functions of various solid-state memristors using a variety of materials. The memristor circuit emulator serves as a cost-effective tool for circuit des ...

Ieee-Inst Electrical Electronics Engineers Inc2024

3D trigonal FAPbI(3)-based multilevel resistive switching nonvolatile memory for artificial neural synapse

Mohammad Khaja Nazeeruddin, Paul Joseph Dyson, Yong Ding, Li Tao, Yao Zhang, Jun Zhang, Bowen Jiang

Hybrid perovskites have attracted enormous attention in the next generation resistive switching (RS) memristor for the artificial synapses, owing to their ambipolar charge transport, long diffusion length, and tunable visible bandgap. However, the variable ...

WILEY2023

Dielectric properties of 3-3 flexible composites by infiltration of elastomers into porous ceramic structures using cellulose scaffold

Thomas Geiger

Elastomer composites are prepared by infiltrating polydimethylsiloxane (PDMS) into a porous ceramic structure of nanoparticles. This method differs from the conventional approach, where particles are dispersed into the polymer matrix, since here, the polym ...

PERGAMON-ELSEVIER SCIENCE LTD2022

The Birth of a New Field: Memristive Sensors. A Review

Sandro Carrara

Over the last 11 years, the field of Memristive Sensors abruptly emerged in literature. The present review paper has the aim to acknowledge such an exciting new field of research as well as to critically review its most significant outcomes. As usual in sc ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Mihai Adrian Ionescu, Ali Saeidi, Teodor Rosca, Sadegh Kamaei Bahmaei, Matteo Cavalieri, Carlotta Gastaldi, Luca Capua

We report the fabrication process and performance characterization of a fully integrated ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the gate stack during charging and discharging, together with the energy loss of a ...

NATURE PORTFOLIO2021

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Teodor Rosca, Sadegh Kamaei Bahmaei, Eamon Patrick O'Connor, Matteo Cavalieri, Carlotta Gastaldi

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Thermally-Compensated Magnetic Core Loss Model for Time-Domain Simulations of Electrical Circuits

Drazen Dujic, Min Luo, Nikolina Djekanovic

This paper introduces a thermally-compensated magnetic hysteresis model, capable of accurately determining core losses of ferrite materials while accounting for core temperature variations. The employed model is based on permeance-capacitance analogy and i ...

2021

20 Years of IEEE SENSORS JOURNAL

Sandro Carrara

The IEEE Sensors Journal was born on June 1, 2001, when its first ever issue was published. The journal has grown exponentially over the past 20 years to become one of the world's largest journals in sensor engineering and technology as well as one of the ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

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Memristor

Emulating Multimemristive Behavior of Silicon Nanowire-Based Biosensors by Using CMOS-Based Implementations

Memristive Control of Plasmon-Mediated Nonlinear Photoluminescence in Au Nanowires

3D trigonal FAPbI(3)-based multilevel resistive switching nonvolatile memory for artificial neural synapse

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Dielectric properties of 3-3 flexible composites by infiltration of elastomers into porous ceramic structures using cellulose scaffold

The Birth of a New Field: Memristive Sensors. A Review

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Thermally-Compensated Magnetic Core Loss Model for Time-Domain Simulations of Electrical Circuits

20 Years of IEEE SENSORS JOURNAL

Graph Chatbot

Chattez avec Graph Search

Memristive Control of Plasmon-Mediated Nonlinear Photoluminescence in Au Nanowires

Dielectric properties of 3-3 flexible composites by infiltration of elastomers into porous ceramic structures using cellulose scaffold

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Emulating Multimemristive Behavior of Silicon Nanowire-Based Biosensors by Using CMOS-Based Implementations

The Birth of a New Field: Memristive Sensors. A Review

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

3D trigonal FAPbI(3)-based multilevel resistive switching nonvolatile memory for artificial neural synapse

Thermally-Compensated Magnetic Core Loss Model for Time-Domain Simulations of Electrical Circuits

20 Years of IEEE SENSORS JOURNAL