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In a recent paper we measured the lateral hole diffusion in a GaAs/AlGaAs single quantum well (SQW) by a novel method. At helium temperature, we estimate a lateral hole diffusion length in the QW of 1.5 mum. However, the assumption that diffusion takes pla ...
CoNiCu/Cu superlattice nanowires have been grown by electrodeposition in nuclear tracketched nanoporous membranes. Transmission electron microscopy (TEM) images show a good layer structure and allow an estimate of the current efficiency. Current perpendicu ...
The temperature dependence of the critical current density has been studied in magnetic fields up to 12 T for Bi-2212/Ag round wires. In short specimens critical current densities of more than 10000 A/cm(2) have been achieved at 20 K and B = 8 T. In the ca ...
A reproducible and robust techique of contacting GaAs/GaAlAs heterostructures using an evaporated AuGeNi alloy has been developed. The behavior of the electrical contacts to the two-dimensional electron gas has been studied in the quantum Hall regime. Cont ...
Institute of Electrical and Electronics Engineers1991
The fluid equations for an electron beam are used to calculate the equilibrium velocity and density profiles, limiting current and space-charge wave properties of an annular beam undergoing magnetic compression in a gyrotron beam tunnel. Both non-relativis ...
We studied the influence of the indium composition y, growth temperature T(s) and InGaAs quantum-well channel thickness d(ch) on the 300 and 77 K Hall electrical properties of pseudomorphic modulation doped field effect transistor (MODFET)-type heterostruc ...
We studied the influence of the growth temperature Ts and of the InGaAs quantum-well channel thickness dch on the 300 and 77 K Hall electrical properties of pseudomorphic MODFET-type heterostructures grown by molecular-beam epitaxy (MBE). In agreement with ...
A Hall mobility as high as 153,800 cm2 V-1 s-1 at 77 K with N(d) - N(a) = 1.5 x 10(14) cm-3 has been obtained by adjusting the growth temperature and the phosphine cracking temperature. The 4 K photoluminescence spectra show finely resolved excitonic trans ...
The authors report the temperature dependence of resistivity and the Hall coefficient RH of a series of Y1Ba2(Cu1-xZnx)3O7-δ ceramics with x up to 0.075. In all their samples they have observed linear temperature dependence of (eRH)-1. The slope, d(eRH)-1/ ...
A Hall mobility as high as 176,200 cm2V-1s-1 at 77 K with N(d)-N(a) = 1.3 x 10(14) cm-3 has been obtained by adjusting the substrate and the phosphine cracker temperatures. The 2 K photoluminescence spectra show finely resolved excitonic transitions for la ...
