Concept
Arséniure de gallium
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Third-generation photovoltaic cell
Third-generation photovoltaic cells are solar cells that are potentially able to overcome the Shockley–Queisser limit of 31–41% power efficiency for single bandgap solar cells. This includes a range of alternatives to cells made of semiconducting p-n junctions ("first generation") and thin film cells ("second generation"). Common third-generation systems include multi-layer ("tandem") cells made of amorphous silicon or gallium arsenide, while more theoretical developments include frequency conversion, (i.e.