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Publications associées (92)

Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices ?

Jean-François Carlin, Eric Feltin, Marcel Py, Marcus Gonschorek, Daniel Grandjean

The performance of novel AlInN/GaN HEMTs for high power / high temperature applications is discussed. With 0.25 mu m gate length the highest maximum output current density of more than 2 A/mm at room temperature and more than 3 A/mm at 77 K have been obtai ...

IEEE2006

Coupling the thermal and mechanical fields to metallurgical evolutions within a finite element description of a forming process

Roland Logé

Finite element formulations are commonly used to predict stress, strain and temperature fields in metal forming. As these models have now gained robustness, an increasing attention is placed on the metallurgical evolutions associated with the thermal and m ...

2006

Properties and stability of thick-film resistors with low processing temperatures - effect of composition and processing parameters

Peter Ryser, Claudio Grimaldi, Thomas Maeder, Caroline Jacq, Sonia Vionnet Menot

In this work, the properties (sheet-resistance, temperature coefficient and piezoresistance / gauge factor) and stability of thick-film resistors with low firing temperatures (525...650°C) are studied. To this end, two low-melting lead borosilicate glass c ...

IMAPS2005

Integrated thick-film hybrid microelectronics applied on different material substrates

Thomas Maeder, Caroline Jacq, Hansu Birol

In this work, we have modified a low-temperature thick-film system previously developed for aluminium and aluminium alloy substrates in order to adapt it to ferritic and austenitic stainless steel, and glass substrates, which, unlike the common alumina sub ...

2005

Efficient electromagnetic analysis of line-fed aperture antennas in thick conducting screens

Juan Ramon Mosig, Ivica Stevanovic

This paper presents a numerical and experimental verification of an approximate but efficient integral equation technique for the scattering by apertures in conducting planes with finite thicknesses. The approach is based on a perturbation method and modif ...

2004

Polymer bonding by means of plasma activation

Hubert Girault, Joël Rossier

A low temperature method of bonding two polymer sheets (2, 3) without adhesive, at least one of said polymer sheets comprising a microstructure (1) or a network of microstructures, comprises the steps of treating at least a portion of one surface of one of ...

2002

Condensation origin of some metal grains in CH chondrites: Implications for the formation of metal in the CR-clan

Anders Meibom

We report findings of large metal grains (~150 um) with distinct zoning patterns in Ni, Co, Cr, and Si in CH chondrites which are consistent with a condensation origin from a gas of solar composition. ...

1999

Validation of a new hot tearing criterion using the ring mould test

Jean-Marie Drezet

Hot tear is one of the most serious defect which a casting can suffer. It represents a major limitation to the production of foundry cast parts and to the productivity of continuous casting processes such as the direct chiil casting of aluminium alloys. As ...

1999

Infiltration of fibrous preforms by a pure metal: Part V. Influence of preform compressibility

Andreas Mortensen

Infiltration by a pure matrix in the presence of preform deformation and partial matrix solidification is analyzed using a bounding approach for the preform rheology where solid metal is present. It is found, using parameters for the infiltration of short ...

1999

Preparation of oxygen evolving electrodes with long service life under extreme conditions

Christos Comninellis

Among the numerous base metals tested for DSA type electrodes (e.g., titanium and its alloys, zirconium, niobium etc.), tantalum is a potentially excellent substrate owing to its good elec. cond. and corrosion resistance, and the favorable dielec. properti ...

1998

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