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The present work investigates the possibility of selective electrochemical metal deposition on ion implanted p-Si. The idea is that defects introduced into the substrate by ion implantation make it more susceptible to electrochemical reactions compared to ...
A new method to release MEMS chips from a wafer without dicing is presented. It can be applied whenever SOI wafers are used that are structured from both the device and the handle side using DRIE. This method enables the release of extremely fragile struct ...
This paper examines the radiation profiles and corresponding ionization source profiles of carbon and main plasma ions in matched helium and deuterium. L-mode plasmas in JET. The radiation intensities from C1+, C2+ and C3+ in the helium plasmas showed redu ...
A transmission electron microscopy (TEM) study using weak-beam imaging has been addressed in order to assess the microstructure of NiAl (100) single-crystals subsequently to irradiation at room temperature with 700 keV nickel ions up to 10(15) cm(-2) or 1. ...
We develop a microionizer as the ion source in a miniaturized spectrometerlike gas analyzer, operating at atmospheric pressure. Several options for the ionizing principle were considered. The application of dc glow discharge in a microsystem was studied in ...
At present, little is known about the response of the martensitic phase in TiNi alloys to heavy ion irradiation. However, previous studies [2,3] of ion and electron irradiation show that these alloys are highly susceptible to disorder and amorphization at ...
The present invention relates to a method and a device for irradiating ions in a ion cyclotron resonance (ICR) trap with photons and/or electrons. For electron irradn. a hollow electron emitter is used, through the hole of which a light beam can be sent in ...
IB-LIGA (Ion Beam Lithographie, Galvanoformung and Abformung) is a new technique for the 3D structuring of photoresist materials. It is a direct-write (maskless) technique that uses high energy (0.5-3.5 McV) light ions (protons or helium ions) for the irra ...
We characterize the transition structure at the Si(100)-SiO2 interface by addressing the inverse ion-scattering problem. We achieve sensitivity to Si displacements at the interface by carrying out ion-scattering measurements in the channeling geometry for ...
