Concept

Magnetic semiconductor

Publications associées (199)

Dynamics of Interfacial Charge Transfer States and Carriers Separation in Dye-Sensitized Solar Cells: A Time-Resolved Terahertz Spectroscopy Study

Jacques-Edouard Moser, Arianna Marchioro, Jan Cornelius Brauer, Arun Aby Paraecattil, Ahmad Ajdar Zadeh Oskouei

Electron injection from a photoexcited molecular sensitizer into a wide-bandgap semiconductor is the primary step toward charge separation in dye-sensitized solar cells (DSSCs). According to the current understanding of DSSCs functioning mechanism, charges ...

American Chemical Society2015

22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

Christophe Ballif, Aïcha Hessler-Wyser, Matthieu Despeisse, Stefaan De Wolf, Sylvain Nicolay, Björn Niesen, Loris Barraud, Jérémie Werner, Andrea Tomasi

Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with ...

American Institute of Physics2015

Composition of Wide Bandgap Semiconductor Materials and Nanostructures Measured by Atom Probe Tomography and Its Dependence on the Surface Electric Field

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté

Atom probe tomography allows for three-dimensional reconstruction of the elemental distribution in materials at the nanoscale. However, the measurement of the chemical composition of compound semiconductors may exhibit strong biases depending on the experi ...

Amer Chemical Soc2014

Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

The analysis of quantum mechanical confinement in recent germanium electron-hole bilayer tunnel field-effect transistors has been shown to substantially affect the band-to-band tunneling (BTBT) mechanism between electron and hole inversion layers that cons ...

American Institute of Physics2014

Rutile TiO2-based perovskite solar cells

Michael Graetzel

A perovskite solar cell based on rutile TiO2 film was prepared and its photovoltaic performance was compared to an anatase TiO2-based perovskite solar cell. Rutile TiO2 nanoparticles with aspect ratio of 0.2 (20 nm wide and 100 nm long) were prepared by hy ...

Royal Society of Chemistry2014

Bi2Te3-xSex series studied by resistivity and thermopower

László Forró, Ana Akrap

We study the detailed temperature and composition dependence of the resistivity, rho(T), and thermopower, S(T), for a series of layered bismuth chalcogenides Bi2Te3-xSex, and report the stoichiometry dependence of the optical band gap. In the resistivity o ...

Epl Association, European Physical Society2014

Manipulating nanocrystal doping, structure, and photocatalytic activity with organic ligands

Raffaella Buonsanti, Anna Loiudice

Org. ligands (or surfactants) are key in detg. colloidal nanocrystal structure and, therefore, function. In addn. to their more traditional role as surface passivating agents impacting nanocrystal size and shape, surfactants can also behave as active reage ...

American Chemical Society2014

Optical properties of BiTeBr and BiTeCl

Arnaud Magrez, Helmuth Berger, Philippe Bugnon, Ana Akrap, Dirk Van der Marel

We present a comparative study of the optical properties-reflectance, transmission, and optical conductivity- and Raman spectra of two layered bismuth-tellurohalides BiTeBr and BiTeCl at 300 and 5 K, for light polarized in the a-b planes. Despite different ...

Amer Physical Soc2014

Band offsets of lattice-matched semiconductor heterojunctions through hybrid functionals and G(0)W(0)

Alfredo Pasquarello, Wei Chen, Karim Steiner

To assess the accuracy of hybrid functional and many-body GW methods, we study the band offsets for a set of lattice-matched semiconductor heterojunctions, including AlAs/GaAs(100), AlP/GaP(100), Si/GaP(110), Ge/GaAs(110), Ge/AlAs(110), Ge/ZnSe(110), and Z ...

American Physical Society2014

Atomistic Modeling of Effect of Mg on Oxygen Vacancy Diffusion in alpha-Alumina

Paul Bowen, Ulrich Aschauer, Abhishek Tewari

Oxygen diffusion plays an important role in grain growth and densification during the sintering of alumina ceramics and governs high-temperature processes such as creep. The atomistic mechanism for oxygen diffusion in alumina is, however, still debated; at ...

Wiley-Blackwell2014

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