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This thesis presents the fabrication and characterization of organic thin film transistors (TFTs) on flexible polymer substrates and the development of compliant stencil lithography to significantly improve the patterning resolution on full-wafer scale. Po ...
Recent publications have reported the presence of hexagonal phases in Si nanowires. Most of these reports were based on 'odd' diffraction patterns and HRTEM images - 'odd' means that these images and diffraction patterns could not be obtained on perfect si ...
Crystals with the scheelite structure have been grown by the Czochralski technique from a melt of composition (Na0.5La0.345Ce0.15Er0.005) MoO4 (NLM: Ce, Er) and have been characterized by scanning and transmission electron microscopy and x-ray microanalysi ...
Stencil lithography is an innovative method for patterning that has a great flexibility from many points of view. It is based on shadow mask evaporation using thin silicon nitride membranes that allow the patterning of sub-100 nm features up to 100 μm in a ...
This paper reports on the design and fabrication of a fully integrated antenna beam steering concept for airborne applications at 17 GHz. The system is based on a single wafer process including a dipole antenna, a balun and a 2-bit distributed MEMS phase s ...
TiO2 nanorods in the brookite phase, with av. dimensions of 3-4 nm × 20-50 nm, were synthesized by a wet-chem. aminolysis route and used as precursors for thin films that were deposited by the matrix-assisted pulsed laser evapn. (MAPLE) technique. A nanoro ...
Electron spin resonance (ESR) measurements on SWCNTs doped with alkali atoms (potassium) using a solid state reaction is reported. We find the emergence of the ESR signal of itinerant electrons upon doping with a signal intensity that is comparable to that ...
We investigate experimental dependence of the third harmonic generation efficiency in the n-type Si crystals on the geometrical dimensions of the sample, polarization and power of the fundamental wave. The efficiency increases monotonically with the rise o ...
The performance of many silicon devices is limited by electronic recombination losses at the crystalline silicon (c-Si) surface. A proper surface passivation scheme is needed to allow minimizing these losses. The surface passivation properties of amorphous ...
Aluminum-catalyzed epitaxial growth of silicon nanowire (SiNW) arrays was performed on Si wafer by chemical vapor deposition at 600°C. The arrays showed a low optical total reflectance in the visible light spectrum, with a minimum of 2% around 450nm wavele ...
