Publications associées à Antimoniure d'indium

Spin waves with large decay length and few 100 nm wavelengths in thin yttrium iron garnet grown at the wafer scale

Using conventional coplanar waveguides (CPWs), we excited spin waves with a wavelength λ down to 310 nm in a 200 nm thin yttrium iron garnet film grown by liquid phase epitaxy. Spin-wave transmission was detected between CPWs that we separated by up to 2 m ...

American Institute of Physics2017

A new formation strategy of hybrid perovskites via room temperature reactive polyiodide melts

Michael Graetzel, Shaik Mohammed Zakeeruddin, Andrey Petrov

Here we introduce a new solvent-free preparation method for hybrid metal halide perovskites involving the direct reaction of metallic lead with polyiodide melts. We discovered new reactive polyiodide melts (RPMs) that can be prepared simply by adding eleme ...

Royal Soc Chemistry2017

Morphology and composition of oxidized InAs nanowires studied by combined Raman spectroscopy and transmission electron microscopy

Anna Fontcuberta i Morral, Esther Alarcon Llado, Francesca Amaduzzi

importance for semiconductor nanowires because of the high surface-to-volume ratio and only little is known about the consequences of oxidation for these systems. Here, we study the properties of indium arsenide nanowires which were locally oxidized using ...

Institute of Physics2016

Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping

Anna Fontcuberta i Morral, Federico Matteini, Alberto Casadei, Fauzia Jabeen

Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time resolved terahertz photoconductivity for assessing n- and p-type doping efficienc ...

American Chemical Society2016

Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

Anna Fontcuberta i Morral, Sonia Conesa Boj, Heidi Andrea Potts

In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the int ...

American Chemical Society2016

Manifestation of a Second Dirac Surface State and Bulk Bands in THz Radiation from Topological Insulators

Helmuth Berger, Hua Chen

Topological insulators (TIs) are interesting quantum matters that have a narrow bandgap for bulk and a Dirac-cone-like conducting surface state (SS). The recent discovered second Dirac surface state (SS) and bulk bands (BBs) located similar to 1.5 eV above ...

Nature Publishing Group2015

Room-Temperature Ballistic Transport in III-Nitride Heterostructures

Elison de Nazareth Matioli

Room-temperature (RT) ballistic transport of electrons is experimentally observed and theoretically investigated in III-nitrides. This has been largely investigated at low temperatures in low band gap III-V materials due to their high electron mobilities. ...

American Chemical Society2015

Gold-Free Ternary III-V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First Bilayer

Sonia Conesa Boj

With the continued maturation of III-V nanowire research, expectations of material quality should be concomitantly raised. Ideally, III-V nanowires integrated on silicon should be entirely free of extended planar defects such as twins, stacking faults, or ...

American Chemical Society2014

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Antimoniure d'indium

Spin waves with large decay length and few 100 nm wavelengths in thin yttrium iron garnet grown at the wafer scale

Advancing Materials and Methods for Photoelectrochemical Energy Conversion

A new formation strategy of hybrid perovskites via room temperature reactive polyiodide melts

Morphology and composition of oxidized InAs nanowires studied by combined Raman spectroscopy and transmission electron microscopy

Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping

Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

Manifestation of a Second Dirac Surface State and Bulk Bands in THz Radiation from Topological Insulators

Room-Temperature Ballistic Transport in III-Nitride Heterostructures

Gold-Free Ternary III-V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First Bilayer

Investigation of indium-rich InGaN alloys and kinetic growth regime of GaN

Graph Chatbot

Chattez avec Graph Search

A new formation strategy of hybrid perovskites via room temperature reactive polyiodide melts

Spin waves with large decay length and few 100 nm wavelengths in thin yttrium iron garnet grown at the wafer scale

Morphology and composition of oxidized InAs nanowires studied by combined Raman spectroscopy and transmission electron microscopy

Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping

Advancing Materials and Methods for Photoelectrochemical Energy Conversion

Gold-Free Ternary III-V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First Bilayer

Manifestation of a Second Dirac Surface State and Bulk Bands in THz Radiation from Topological Insulators

Room-Temperature Ballistic Transport in III-Nitride Heterostructures

Investigation of indium-rich InGaN alloys and kinetic growth regime of GaN