Concept

Thyristor

Publications associées (85)

Electron counting at room temperature in an avalanche bipolar transistor

Giovanni Boero, Radivoje Popovic, Marc Lany

We report on real-time detection of single electrons inside a n-p-n bipolar junction transistor at room temperature. Single electrons injected through the base-emitter junction trigger with a high probability the avalanche breakdown of the strongly reverse ...

2008

Semiconductor device for measuring ultra small electrical currents and small voltages

Radivoje Popovic, Marc Lany

A semiconductor device for measuring ultra low currents down to the level of single electrons or low voltages comprises a first and a second voltage supply terminal (1, 2), an input terminal (3) for receiving an electrical current or being supplied with a ...

2008

Substrate current modeling for high-voltage smart power BCD technology

Maher Kayal, François Krummenacher, Marc Pastre, Fabrizio Lo Conte

This paper presents a compact- and a macro-model for estimating and simulating the perturbations induced in the substrate by high-voltage transistors switching inductive loads. On one hand, it allows the designer to predict the amount of switching noise ge ...

2008

Cross connected multilevel voltage source inverter topologies for medium voltage applications

Toufann Chaudhuri

Multilevel voltage source inverters where first introduced in the early 1980s. Since then, they have been continuously developed, offering a wide new research area in power electronics. The popularity of multilevel solutions come from the advantages that t ...

EPFL2008

Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters

Mihai Adrian Ionescu, Dimitrios Tsamados, Yogesh Singh Chauhan, Christoph Eggimann

This paper proposes, the investigation of the Suspended Gate Field-Effect Transistor (SG-FET) small-slope switch based on a hybrid numerical simulation approach combining ANSYSTM Multiphysics and ISE-DESSISTM in a self-consistent system. The proposed numer ...

2008

Counting single electrons in a CMOS circuit

Radivoje Popovic, Marc Lany

We describe a device compatible with CMOS technology, which permits to detect a single charge by multiplying it to an easily measurable level. The device is a bipolar transistor optimized for the operation in the Geiger avalanche mode. A single electron, i ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2008

The Active Self-controlled Free-wheeling Management Principle Applied to Reverse Recovery Losses Reduction

Alfred Rufer, Philippe Barrade, Daniel Siemaszko

Several works suggest the imminent appearance of bidirectional active devices. The promised performances go in the direction of a reverse recovery effects reduction and efficiency improvement. Our purpose is the study of an active management for switches t ...

2007

New self-switching mechanisms for active bidirectional switches

Alfred Rufer, Philippe Barrade, Daniel Siemaszko

The self-switching principle is a synthesis of synchronous type switching and switch inner protection mechanisms. Both switch ON and switch OFF are performed on the base of current and voltage measurement across the switch. Applied to an active bidirection ...

2007

A Multilevel Power Converter with Integrated Storage for Particle Accelerators

Alfred Rufer

The PS accelerator (Proton-Synchrotron) at CERN (European Organization for Nuclear Research) is composed of one hundred magnets connected in series. During a cycle of 2.4 seconds, the active power at the magnets terminals varies from plus to minus 40 MW. A ...

2007

Thermally Assisted Transition in Thin Film Based FCL: A Way to Speed Up the Normal Transition Across the Wafer

Joseph Duron, Bertrand Dutoit

The adjunction of constrictions along the meander of a superconducting Fault Current Limiter (FCL) greatly improves its behavior thanks to a better distribution of the dissipative zones at the occurrence of a short circuit. This design works perfectly for ...

2007

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