Publications associées à Pyramides de Gizeh

Robust numerical integration on curved polyhedra based on folded decompositions

Annalisa Buffa, Pablo Antolin Sanchez, Xiaodong Wei

We present a novel method to perform numerical integration over curved polyhedra enclosed by high-order parametric surfaces. Such a polyhedron is first decomposed into a set of triangular and/or rectangular pyramids, whose certain faces correspond to the g ...

ELSEVIER SCIENCE SA2022

Analysis of double cross-slip of pyramidal I < c plus a > screw dislocations and implications for ductility in Mg alloys

William Curtin, Zhaoxuan Wu, Rasool Ahmad

Solute accelerated cross-slip of pyramidal < c + a > screw dislocations has recently been recognized as a crucial mechanism in enhancing the ductility of solid-solution Mg alloys. In pure Mg, cross-slip is ineffective owing to the energy difference between ...

PERGAMON-ELSEVIER SCIENCE LTD2020

Purkinje Images: Conveying Different Content for Different Luminance Adaptations in a Single Image

Mahmut Sami Arpa

Providing multiple meanings in a single piece of art has always been intriguing to both artists and observers. We present Purkinje images, which have different interpretations depending on the luminance adaptation of the observer. Finding such images is an ...

Wiley-Blackwell2015

Dilute-Nitride Low-Dimensional Nanostructures Formed on Non-Planar Substrates

Romain Carron

The properties of semiconductors heterostructures of nanoscopic dimensions change from that of bulk material according to the rules of quantum mechanics. The planar quantum wells (QWs) are widely used in various diode and laser devices thanks to the relati ...

EPFL2013

Modification of textured silicon wafer surface morphology for fabrication of heterojunction solar cell with open circuit voltage over 700mV

Christophe Ballif, Aïcha Hessler-Wyser, Stefaan De Wolf, Luc Fesquet

Crystalline silicon wafer (c-Si) can be extremely well passivated by plasma enhanced chemical vapor deposited (PECVD) amorphous silicon (a-Si:H) films. As a result, on flat substrates, solar cells with very high open circuit voltage are readily obtained. O ...

2010

Pyramid-Based Texture Synthesis Using Local Orientation and Multidimensional Histogram Matching

Michaël Unser, Dimitri Nestor Alice Van De Ville, Matthieu Guerquin-Kern

One very influential method for texture synthesis is based on the steerable pyramid by alternately imposing marginal statistics on the image and the pyramid's subbands. In this work, we investigate two extensions to this framework. First, we exploit the st ...

SPIE2009

Growth model of MOCVD polycrystalline ZnO

Christophe Ballif, Sylvain Nicolay, Sylvie Faÿ

A growth model for the low pressure chemical vapor deposition (LPCVD) of polycrystalline ZnO thin films is proposed. This model is based on experimental observations of the surface morphology and crystallographic orientations of the layers at different thi ...

2009

LPCVD GROWTH OF ZNO FOR SOLAR CELL APPLICATIONS

Christophe Ballif, Sylvain Nicolay, Sylvie Faÿ

A growth model for the low pressure chemical vapor deposition (LPCVD) of polycrystalline ZnO thin films is proposed. This model is based on experimental observations of the surface morphology and crystallographic orientations of the layers at different thi ...

2009

Fractional Laplacian Pyramids

Michaël Unser, Ricard Delgado Gonzalo, Pouya Dehghani Tafti

We provide an extension of the L-2-spline pyramid (Unser et al., 1993) using polyharmonic splines. We analytically prove that the corresponding error pyramid behaves exactly as a multi-scale Laplace operator. We use the multiresolution properties of polyha ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Modification of textured silicon wafer surface morphology for fabrication of heterojunction solar cell with open circuit voltage over 700 mV

Christophe Ballif, Aïcha Hessler-Wyser, Christian Monachon, Stefaan De Wolf, Luc Fesquet

Crystalline silicon wafer (c-Si) can be extremely well passivated by plasma enhanced chemical vapor deposited (PECVD) amorphous silicon (a-Si:H) films. As a result, on flat substrates, solar cells with very high open circuit voltage are readily obtained. O ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Pyramides de Gizeh

Robust numerical integration on curved polyhedra based on folded decompositions

Analysis of double cross-slip of pyramidal I < c plus a > screw dislocations and implications for ductility in Mg alloys

Purkinje Images: Conveying Different Content for Different Luminance Adaptations in a Single Image

Dilute-Nitride Low-Dimensional Nanostructures Formed on Non-Planar Substrates

Modification of textured silicon wafer surface morphology for fabrication of heterojunction solar cell with open circuit voltage over 700mV

Pyramid-Based Texture Synthesis Using Local Orientation and Multidimensional Histogram Matching

Growth model of MOCVD polycrystalline ZnO

LPCVD GROWTH OF ZNO FOR SOLAR CELL APPLICATIONS

Fractional Laplacian Pyramids

Modification of textured silicon wafer surface morphology for fabrication of heterojunction solar cell with open circuit voltage over 700 mV

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Dilute-Nitride Low-Dimensional Nanostructures Formed on Non-Planar Substrates

Purkinje Images: Conveying Different Content for Different Luminance Adaptations in a Single Image

Robust numerical integration on curved polyhedra based on folded decompositions

Analysis of double cross-slip of pyramidal I < c plus a > screw dislocations and implications for ductility in Mg alloys

Modification of textured silicon wafer surface morphology for fabrication of heterojunction solar cell with open circuit voltage over 700mV

LPCVD GROWTH OF ZNO FOR SOLAR CELL APPLICATIONS

Pyramid-Based Texture Synthesis Using Local Orientation and Multidimensional Histogram Matching

Fractional Laplacian Pyramids

Growth model of MOCVD polycrystalline ZnO

Modification of textured silicon wafer surface morphology for fabrication of heterojunction solar cell with open circuit voltage over 700 mV