Publications associées à Courant d'obscurité

HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate

Giovanni De Cesare, Luca Massimiliano Antognini, Sylvain Dunand, Mikaël Martino, Jonathan Emanuel Thomet, Matthew James Large

Hydrogenated amorphous silicon (a-Si:H) is a material with a very good radiation hardness and with the possibility of deposition on flexible substrates like Polyimide (PI). Exploiting these properties, the HASPIDE (Hydrogenated Amorphous Silicon PIxels DEt ...

Iop Publishing Ltd2024

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu

In this letter, we present high-performance GaN-on-Si metal-oxide-semiconductor high electron mobility transistors with record reverse-blocking (RB) capability. By replacing the conventional ohmic drain with a hybrid tri-anode Schottky drain, a high revers ...

Institute of Electrical and Electronics Engineers2017

Development of TORCH readout electronics for customised MCPs

Christoph Frei

The TORCH detector is being developed for low-momentum particle identification, combining time-of-flight and Cherenkov techniques to achieve charged particle pi/K/p separation up to 10 GeV/c over a flight distance of 10m. This requires a timing resolution ...

Iop Publishing Ltd2016

CMOS-Compatible PureGaB Ge-on-Si APD Pixel Arrays

Edoardo Charbon, Mahdi Aminian

Pure gallium and pure boron (PureGaB) Ge-on-Si photodiodes were fabricated in a CMOS compatible process and operated in linear and avalanche mode. Three different pixel geometries with very different area-to-perimeter ratios were investigated in linear arr ...

Ieee-Inst Electrical Electronics Engineers Inc2016

CMOS Demodulation Image Sensor for Nanosecond Optical Waveform Analysis

Maher Kayal, Nicolas Blanc, Lysandre-Edouard Bonjour

An image sensor with 256 x 256 pixels and a pitch of 6.3 mu m, suitable for resolving ultrashort optical phenomena, is developed. It is based on a standard CMOS process with pinned photodiode option. The pixel comprises three transfer gates to allow versat ...

Institute of Electrical and Electronics Engineers2013

A highly sensitive a-Si photodetector array with integrated filter for optical detection in MEMS

Pierre-André Farine, Steve Tanner, Mohssen Moridi, Stephan Rohr

This paper presents a highly sensitive photo-detector array deposited on a glass substrate with an integrated optical filter. The active element is a vertically integrated hydrogenated amorphous silicon photodiode featuring a dark current of less than 1e-1 ...

Procedia Chemistry2009

Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages

Nicolas Grandjean, Jean-François Carlin, Julien Dorsaz, Eric Feltin, Antonino Francesco Castiglia, Mauro Mosca

Forward and reverse leakage currents in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) are caused by reactive-ion etching (RIE) damages during device patterning. A method to recover the damaged surfaces, based on a chemical etch in KOH: ethylene ...

2008

Développement d'un module de détection phoswich LSO/LuYAP pour le prototype de caméra à positrons ClearPET

Jean-Baptiste Mosset

The first part of this thesis describes the development of an optimised LSO/LuYAP phoswich detector head for the ClearPET demonstrator positron emission tomograph (PET) dedicated to small animals that is under construction in Lausanne within the Crystal Cl ...

EPFL2006