Publications associées à Courant d'obscurité

Reverse Biasing and Breakdown Behavior of PureB Diodes

In PureB technology, a layer of pure boron is deposited on Si using a commercial single-wafer Si/SiGe epitaxial CVD reactor, forming ideal nm-deep ultrashallow junctions with low saturation currents [1]. As another attractive feature, the PureB layer itsel ...

2013

CMOS Demodulation Image Sensor for Nanosecond Optical Waveform Analysis

Maher Kayal, Nicolas Blanc, Lysandre-Edouard Bonjour

An image sensor with 256 x 256 pixels and a pitch of 6.3 mu m, suitable for resolving ultrashort optical phenomena, is developed. It is based on a standard CMOS process with pinned photodiode option. The pixel comprises three transfer gates to allow versat ...

Institute of Electrical and Electronics Engineers2013

A Ge-on-Si single-photon avalanche diode operating in Geiger mode at infrared wavelengths

Edoardo Charbon, Mahdi Aminian, Lin Qi

The Ge APD detectors are fabricated on Si by using a selective chemical-vapor deposition (CVD) epitaxial growth technique. A novel processing procedure was developed for the p+ Ge surface doping by a sequence of pure-Ga and pure-B depositions (PureGaB). Th ...

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2012

Design Tradeoffs in Ultra-Low-Power Digital Nano-Scale CMOS

Seyed Armin Tajalli, Yusuf Leblebici

In ultra-low-power (ULP) applications, the supply voltage is generally reduced well below threshold voltage of MOS devices in order to limit dissipation and to control the device leakage current due to the subthreshold channel residual current. However, re ...

Institute of Electrical and Electronics Engineers2011

A highly sensitive a-Si photodetector array with integrated filter for optical detection in MEMS

Pierre-André Farine, Steve Tanner, Mohssen Moridi, Stephan Rohr

This paper presents a highly sensitive photo-detector array deposited on a glass substrate with an integrated optical filter. The active element is a vertically integrated hydrogenated amorphous silicon photodiode featuring a dark current of less than 1e-1 ...

Procedia Chemistry2009

A highly sensitive a-Si photodetector array with integrated filter for optical detection in MEMS

Pierre-André Farine, Steve Tanner, Mohssen Moridi, Stephan Rohr

This paper presents a highly sensitive photo-detector array deposited on a glass substrate with an integrated optical filter. The active element is a vertically integrated hydrogenated amorphous silicon photodiode featuring a dark current of less than 1e-1 ...

Elsevier2009

A highly sensitive a-Si photodetector array with integrated filter for optical detection in MEMS

This paper presents a highly sensitive photo-detector array deposited on a glass substrate with an integrated optical filter. The active element is a vertically integrated hydrogenated amorphous silicon photodiode featuring a dark current of less than 1e-1 ...

Elsevier B.V.2009

An amorphous silicon photodiode array for glass-based optical MEMS application

Pierre-André Farine, Steve Tanner, Mohssen Moridi

A highly sensitive photo-detector array deposited on a glass substrate with an optional integrated optical filter have been presented. The active element is a vertically integrated hydrogenated amorphous silicon photodiode featuring a dark current of less ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

An amorphous silicon photodiode array for glass-based optical MEMS application

Pierre-André Farine, Steve Tanner, Mohssen Moridi

A highly sensitive photo-detector array deposited on a glass substrate with an optional integrated optical filter have been presented. The active element is a vertically integrated hydrogenated amorphous silicon photodiode featuring a dark current of less ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

An amorphous silicon photodiode array for glass-based optical MEMS application

Pierre-André Farine, Steve Tanner, Mohssen Moridi, Stephan Rohr

A highly sensitive photo-detector array deposited on a glass substrate with an optional integrated optical filter have been presented. The active element is a vertically integrated hydrogenated amorphous silicon photodiode featuring a dark current of less ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Courant d'obscurité

Reverse Biasing and Breakdown Behavior of PureB Diodes

CMOS Demodulation Image Sensor for Nanosecond Optical Waveform Analysis

A Ge-on-Si single-photon avalanche diode operating in Geiger mode at infrared wavelengths

Design Tradeoffs in Ultra-Low-Power Digital Nano-Scale CMOS

A highly sensitive a-Si photodetector array with integrated filter for optical detection in MEMS

A highly sensitive a-Si photodetector array with integrated filter for optical detection in MEMS

A highly sensitive a-Si photodetector array with integrated filter for optical detection in MEMS

An amorphous silicon photodiode array for glass-based optical MEMS application

An amorphous silicon photodiode array for glass-based optical MEMS application

An amorphous silicon photodiode array for glass-based optical MEMS application

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A highly sensitive a-Si photodetector array with integrated filter for optical detection in MEMS

An amorphous silicon photodiode array for glass-based optical MEMS application

Reverse Biasing and Breakdown Behavior of PureB Diodes

CMOS Demodulation Image Sensor for Nanosecond Optical Waveform Analysis

A highly sensitive a-Si photodetector array with integrated filter for optical detection in MEMS

Design Tradeoffs in Ultra-Low-Power Digital Nano-Scale CMOS

A Ge-on-Si single-photon avalanche diode operating in Geiger mode at infrared wavelengths

An amorphous silicon photodiode array for glass-based optical MEMS application

A highly sensitive a-Si photodetector array with integrated filter for optical detection in MEMS

An amorphous silicon photodiode array for glass-based optical MEMS application