Publications associées à Mini-ordinateur

Compact Model for Continuous Microfluidic Mixer

Jean-Michel Sallese, Christophe Lallement

While the development of lab-on-chip is increasing, the lack of dedicated computer-aided design tools appears as a bottleneck preventing the emergence of large-scale industrial applications. One of the answer relied on 50 years of CAD experience in microel ...

IEEE2020

FloDB: Unlocking Memory in Persistent Key-Value Stores

Rachid Guerraoui, Mihail Igor Zablotchi, Vasileios Trigonakis, Oana Maria Balmau

Log-structured merge (LSM) data stores enable to store and process large volumes of data while maintaining good performance. They mitigate the I/O bottleneck by absorbing updates in a memory layer and transferring them to the disk layer in sequential batch ...

2017

SABRes: Atomic Object Reads for In-Memory Rack-Scale Computing

Babak Falsafi, Edouard Bugnion, Boris Robert Grot, Alexandros Daglis, Stanko Novakovic, Dmitrii Ustiugov

Modern in-memory services rely on large distributed object stores to achieve the high scalability essential to service thousands of requests concurrently. The independent and unpredictable nature of incoming requests results in random accesses to the objec ...

Ieee2016

Top-Down Fabrication of Gate-All-Around Vertically-Stacked Silicon Nanowire FETs with Controllable Polarity

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Jian Zhang, Pierre-Emmanuel Julien Marc Gaillardon, Michele De Marchi

Asthe currentMOSFET scaling trend is facing strong limitations, technologies exploiting novel degrees of freedom at physical and architecture level are promising candidates to enable the continuation of Moore's predictions. In this paper, we report on the ...

Institute of Electrical and Electronics Engineers2014

Polarity Control in Double-Gate, Gate-All-Around Vertically Stacked Silicon Nanowire FETs

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Pierre-Emmanuel Julien Marc Gaillardon, Jian Zhang, Michele De Marchi

We fabricated and characterized ambipolar Silicon Nanowire (SiNW) FET transistors featuring two independent Gate-All-Around (GAA) electrodes and vertically stacked SiNW channels. One of the gate electrodes is exploited to dynamically select the polarity of ...

2012

Fabrication and Characterization of Vertically Stacked Gate-All-Around Si Nanowire FET Arrays

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Mohamed Haykel Ben Jamaa

We describe the fabrication of vertically stacked Silicon Nanowire Field Effect Transistors (SiNWFETs) in Gate-All Around (GAA) configuration. Stacks with the number of channels ranging from 1 to 12 have been successfully produced by means of a micrometer ...

2009

A multitasking and data-driven architecture for multi-agents simulations

Sébastien Schertenleib

The expansion of 3D real-time simulations (3DRTS) into millions of homes together with the technical progress of computers hardware force to approach software developments for 3DRTS from different perspectives. From an historical standpoint, 3DRTS started ...

EPFL2006