Concept

Ion Sensitive Field Effect Transistor

Publications associées (41)

Combining diamond electrodes with GaN heterostructures for harsh environment ISFETs

Electrochemistry and biochemistry have always been ideal applications for diamond due to its chemical inertness and stability, sensitivity and biocompatibility. Several diamond ChemFET concepts have been proposed to date, however further improvements are s ...

2009

Single-chip detector for electron spin resonance spectroscopy

Giovanni Boero

We have realized an innovative integrated detector for electron spin resonance spectroscopy. The microsystem, consisting of an LC oscillator, a mixer, and a frequency division module, is integrated onto a single silicon chip using a conventional complement ...

2008

Effect of anodic oxidation on the characteristics of lattice-matched AlInN/GaN heterostructures

Nicolas Grandjean, Jean-François Carlin, Eric Feltin

The effect of anodic oxidation on the electronic characteristics of lattice-matched AlInN/GaN heterostructures was investigated using field-effect transistor (FET) structures with the gate areas in direct contact with the electrolytes. The gate surface of ...

2008

On performance of series connected CMOS vertical hall devices

Radivoje Popovic, Mirjana Banjevic

Series connected (stacked) CMOS vertical Hall devices were analyzed on the basis of performance of a single five contacts device biased at different common mode voltages with respect to the substrate. The uneven influence of junction field effect on residu ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2008

Integration of MOSFET transistors in MEMS resonators for improved output detection

Mihai Adrian Ionescu, Dimitrios Tsamados, Daniel Grogg

Micro-electromechanical (MEM) laterally vibrating square resonators and beams, fabricated via a prototyping technology combining FIB-micromachined gaps with conventional UV lithography in 1.35 mu m thick SOI are presented. Resonators with both capacitive a ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2007

Ferroelectric gates with rewritable domain nanopatterns for modulation of transport properties in GaN/AlGaN heterostructures

Nava Setter, Jean-François Carlin, Igor Stolichnov, Enrico Colla, Lisa Malin

The concept of field-effect transistor with ferroelectric gate in combination with the advanced technique of direct domain writing is applied for modulation of transport properties of 2D electron gas located close to the interface in a GaN/AlGaN heterostru ...

AIP2005

High voltage devices for standard MOS technologies

Costin Anghel

This work reports on the analysis of high voltage lateral devices. Two different architectures, self-aligned LDMOS and non-self-aligned XDMOS are presented and used in this work. For the separation of the physical effects that take place inside the HV devi ...

EPFL2004

Reducing the interference from CO2 or organic acids in ion-selective polymer membrane sensors having a field-effect transistor as internal reference element

Nico de Rooij, Peter Van der Wal

Changes in sample concentrations of CO2 or organic acids cause potential instabilities when polymer membranes are directly applied to the surface of ion-selective field-effect transistors (ISFETs). Currently used designs avoid this well-documented effect b ...

2002

Spin interference and Fabry–Pérot resonances in ferromagnet–semiconductor–ferromagnet devices

Dirk Grundler

Magnetoconductance across permalloy/InAs(2DES)/permalloy double junctions in the ballistic limit is examined within the transfer-matrix formalism. We take into account Rashba spin–orbit interaction in the semiconductor as well as oblique modes in devices o ...

Elsevier2002

Extraction of FET parameters at low drain bias by taking into account the dependence of mobility on 2D electron gas concentration

Marc Ilegems, Marcel Py

An original method for the extraction of FET parameters at low drain bias is presented. It is based on a simple linear charge-control model and on a power-law dependence (with an exponent k > 0 for GaAs/AlGaAs MODFET's and k < 0 for Si-MOSFET's) of the low ...

Elsevier1991

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