Optique non linéaire | EPFL Graph Search

Lorsqu'un milieu matériel est mis en présence d'un champ électrique \vec E , il est susceptible de modifier ce champ en créant une polarisation \vec P . Cette réponse du matériau à l'excitation peut dépendre du champ \vec E de différentes façons. L'optique non linéaire regroupe l'ensemble des phénomènes optiques présentant une réponse non linéaire par rapport à ce champ électrique, c'est-à-dire une réponse non proportionnelle à E. En présence d'une onde électromagnétique du domaine de l'optique (longueur d'onde de l'ordre de 1000 nm), autrement dit, de lumière, beaucoup de matériaux sont transparents, et certains d'entre eux sont non linéaires, c'est pourquoi l'optique non linéaire est possible. Les principales différences avec l'optique linéaire sont les possibilités de modifier la fréquence de l'onde ou de faire interagir entre elles deux ondes par l'intermédiaire du matériau. Ces propriétés très particulières ne peuvent apparaître qu'avec des

Integrated Gallium Phosphide Photonics

Katharina Schmeing

The integration of new materials mediating light-matter interaction in nanoscale devices is a persistent goal in nanophotonics. One of these materials is Gallium phosphide, which offers an attractive combination of a high refractive index (n=3.05 at a wavelength of 1550 nm) and a large bandgap (Eg =2.26 eV), enabling photonic devices with strongly confined light fields, not suffering from heating due to two-photon absorption at telecommunication wavelengths. Furthermore, due to its non-centrosymmetric crystal structure, it has a non-vanishing second-order susceptibility and is piezoelectric. Related to its large refractive index is a high third-order susceptibility. Prior to this work the use of GaP for photonic devices was limited to individual non-integrated components, as GaP was not available on a substrate with substantially lower refractive index equivalent to SOI-wafers for silicon. In this work a process was developed that allows the integration of GaP devices onto SiO2. It exploits direct wafer bonding of a GaP/AlxGa1-xP/GaP heterostructure onto a SiO2-on-Si wafer. After substrate removal, photonic devices are patterned by dry-etching in the top GaP device layer. The GaP devices investigated here are used to explore nonlinear optics and optomechanics. In the area of nonlinear optics, second- and third-harmonic generation are observed. The Kerr coefficient is experimentally estimated as n2[1550nm] = 1.2(5)x10^17m^2/W, for the first time in a precision measurement at telecommunication wavelengths. Four-wave mixing is used for broadband frequency comb generation, where a power threshold as low as 3 mW is obtained. The combination of four-wave mixing and second-harmonic generation leads to frequency-doubled combs. The optomechanical properties of GaP one-dimensional photonic crystal cavities are optimized by simulations and fabricated devices are characterized. Optical quality factors of Qo>10^5 and optomechanical coupling strengths of g0/2pi=400 kHz are measured. Dynamical backaction in the form of the spring effect and the parametric amplification are observed, as well as optomechanically induced transparency and absorption. A device design for a microwave-to-optical transducer is developed, relying on the piezoelectricity of GaP. It combines electromechanical and optomechanical transduction. The predicted electromechanical coupling strength is in the MHz range. Furthermore, photonic crystal cavity designs containing a slot at the center of the cavity are studied. According to simulations for slot widths below 30 nm, optomechanical coupling strengths g0/2pi>1 MHz could be achieved. Fabricated silicon photonic crystal cavities show high quality factors of Qo=8x10^4 while hosting a mechanical eigenmode with a frequency of 2.7 GHz. Because of process technology limitations, only slot widths as narrow as 40 nm can be fabricated, the achieved g0/2pi is limited to 300 kHz. The new GaP-on-insulator material platform opens the door to integrated GaP devices. Frequency combs are of interest for soliton comb formation, mid-IR frequency combs, and ultra-broadband supercontinuum generation. Microwave-to-optical transducers are on the one hand desired for quantum information processing, on the other hand they are applicable as efficient modulators or detectors for classical signals.

EPFL2019

Optical parametric gain in CMOS-compatible sub-100 mu m photonic crystal waveguides

Ezgi Sahin

Emerging compositionally engineered complementary metal-oxide-semiconductor (CMOS)-compatible platforms have been employed for high efficiencies in various on-chip applications, including optical parametric amplification and wavelength conversion. Combining the novel nonlinear optics platforms such as ultra-silicon-rich nitride (USRN: Si7N3) with periodic waveguide structures can lead to further enhancement of material nonlinearities via the slow light effect and enable ultra-compact devices. Four-wave mixing in a USRN-based, CMOS-compatible, photonic crystal waveguide (PhCWg) leading to on/off optical parametric signal gain reaching 3 dB, and a large instantaneous idler conversion efficiency of -1 dB is explored experimentally. Enhancement of Kerr nonlinearity in the presence of a sizable and near-constant group index allows the findings on an ultra-compact, 97 mu m-long PhCWg, equivalent to a large on/off gain per unit length of 333 dB/cm. (C) 2020 Author(s).

AMER INST PHYSICS2020

Peculiarities of second harmonic generation with chirped femtosecond pulses at high conversion efficiency

Pierre-Marc Jean Marie Dansette

Frequency doubling of an infrared laser radiation in non-linear optical crystals is a widely used technique to obtain light in the visible range. The second harmonic generation process is influenced by several well-known parameters. In this article we study the effect of group delay dispersion on the second harmonic generation process for femtosecond pulses. We show, both through simulation and experiments, that for certain parameters even a small amount of chirp can have a detrimental effect on the conversion efficiency as well as the second harmonic beam quality. We also check the effect of higher order dispersion. By properly accounting for those effects the crystal length and focusing conditions can be optimized to reach high conversion efficiency, while maintaining low sensitivity to chirp variations and good beam quality.

ELSEVIER2020

Integrated Gallium Phosphide Photonics

Katharina Schmeing

EPFL2019