Inversion du champ magnétique terrestre

L'inversion du champ magnétique terrestre (également appelé champ géomagnétique) est un phénomène récurrent dans l'histoire géologique terrestre, le pôle Nord magnétique se déplace au pôle Sud géographique, et inversement. C'est le résultat d'une perturbation de la stabilité du noyau de la Terre. Le champ géomagnétique s’affole alors pendant une courte période (de ) pendant laquelle les pôles magnétiques se déplacent rapidement sur toute la surface du globe, ou disparaissent, selon les théories. Au cours de cette transition, l'intensité du champ géomagnétique est très faible et la surface de la planète peut être exposée au vent solaire, potentiellement dangereux pour les organismes vivants. Si cela se produisait aujourd'hui, de nombreuses technologies utilisant le champ géomagnétique pourraient aussi être affectées. À la fin de cette période de transition, soit les pôles magnétiques reprennent leurs positions initiales, il s'agit alors seulement d'une excursion géomagnétique, soit i

Magnetic Properties of Surface Adsorbed Metal Adatoms and Dimers

Dante Philippe Sblendorio

This thesis investigates the magnetic properties of single atoms and dimers adsorbed on graphene and oxide decoupling layers supported by single crystal metal substrates, using scanning tunneling microscopy (STM) and spin-polarized scanning tunneling microscopy (SP-STM). The goal is twofold: to use SP-STM to further advance the understanding of the interactions that determine the magnetic stability of Dy adatoms on graphene/Ir(111) and Ho adatoms on MgO/Ag(100), and to use insights from these systems to motivate the study of new systems-- mainly, IrCo heterodimers on graphene/Ir(111).For Dy adatoms on graphene/Ir(111), the characteristic lifetime of the spin system is measured as a function of temperature and tunnel bias, probing the available magnetization reversal pathways in the energy level diagram. The necessity of including the intra-atomic exchange to correctly describe spin lifetimes is demonstrated. In addition, naturally abundant Dy isotopes possess two possible nuclear spin values. Models of both nuclear spin cases of Dy are compared, and shown to produce similar behavior in the temperature and bias ranges probed by SP-STM. Furthermore, accounting for both nuclear spin cases allows for modeling of X-ray magnetic circular dichroism (XMCD) magnetization sweeps. For Ho adatoms on MgO/Ag(100), novel measurement protocols are used to determine the zero-field stability, and the correct ground state model. These protocols are also used to induce magnetic state reversal via Landau-Zener tunneling at avoided level crossings due to the hyperfine interaction. Finally, the study of the IrCo heterodimer adsorbed on graphene is motivated with stability considerations derived from the studies of Dy adatoms on graphene/Ir(111) and Ho adatoms on MgO/Ag(100), in addition to calculations based on density function theory (DFT). Strategies of engineering these heterodimers using statistical growth and atomic manipulation are successfully implemented. The heterodimer is highly mobile on graphene/Ir(111) and displays geometric instability, consistent with its predicted upstanding geometry. Despite this, measurement via STM and SP-STM is demonstrated. Observations are consistent with the robust magnetic stability expected from DFT studies, but additional investigation is needed to disentangle the measurements made thus far.

EPFL2022

Magnetization Reversal Dynamics in Ferromagnetic Semiconductors

Liza Herrera Diez

This thesis is dedicated to the study of the magnetization reversal dynamics in compressively strained (Ga,Mn)As and differently functionalized (Ga,Mn)As materials. In the first part the domain wall dynamics of pure (Ga,Mn)As/GaAs materials is in the focus. The changes in the magnetic anisotropy energy landscape occurring as a function of temperature are monitored in detail by different experimental techniques. These measurements provide the necessary information for the identification of the temperature ranges corresponding to different magnetic anisotropy regimes. Knowing the biaxial anisotropy and uniaxial anisotropy dominated regimes the dependence of the domain wall dynamics on the magnetic anisotropy landscape is studied. Critical changes in domain wall alignment observed by Kerr microscopy are found upon changing from biaxial to uniaxial anisotropy. These changes could be partially attributed to the tendency of the system to minimize magnetic free poles at the domain boundaries. To complement the space resolved studies of the magnetization reversal, magnetic time relaxation effects are addressed. In particular the magnetic aftereffect in (Ga,Mn)As/GaAs is studied in detail. The irreversible aftereffect is evidenced as a critical reduction of the domain wall velocity with time under a constant applied magnetic field below coercivity. This time relaxation is tracked as a function of both time and magnetic field. The measurements show that the overall relaxation is composed of two relaxation processes acting in parallel at short and long time scales. By fitting these experimental results the values of the relaxation times of both relaxation processes were obtained. By this modeling also the values of the activation volumes for two independent (Ga,Mn)As materials are estimated. In the second part of this thesis the possibilities of tuning the electrical and magnetic properties of (Ga,Mn)As by volume and surface treatments are explored. As for the volume modification, oxygen species were incorporated into the (Ga,Mn)As films by means of exposure to an oxygen plasma. The incorporation of oxygen was evidenced by depth profile X-ray photoelectron spectroscopy. This treatment is found to weaken the ferromagnetism, visible as a reduction in the Curie temperature, and to hinder the electrical transport evidenced as an increase in the electrical resistance. In agreement with theories accounting for the hole mediated ferromagnetism in (Ga,Mn)As this behaviour was related to a hole compensation mechanism arising from the presence of oxygen impurities sitting in interstitial positions of the (Ga,Mn)As Zinc blende structure. In the last part, the modulation of the electrical and magnetic properties via surface functionalization is presented. The effects produced by the adsorption of molecular species on (Ga,Mn)As are similar to those found after oxygenation, namely a strong weakening of the magnetic properties and an increase in the values of the electrical resistance. However, in this case the distinctive feature is provided by the possibility of regulating the hole quenching effect by exploiting the additional degree of freedom provided by the chemical properties of the adsorbates. The adsorbate chosen for these experiments are dye molecules that absorb light in the visible range, in this way allowing for a light modulated interaction with the substrate. Using this concept is was possible to observe a modulation of the ferromagnetic transition temperature, the coercive field and the electrical resistance upon illumination. These observations provide a proof of principle for the realization of photo-sensitized (Ga,Mn)As devices where the magnetic properties can be regulated by light.

EPFL2011

Photodiode Response in a CH3NH3PbI3/CH3NH3SnI3 Heterojunction

László Forró, Karoly Holczer, Endre Horvath, Bálint Náfrádi, Andrea Pisoni, Massimo Spina

Here we report another surprising feature of the methylammonium metal halide material family, the phototunability of the diode response of a heterojunction made of CH3NH3PbI3 and its close relative, CH3NH3SnI3. In the dark state the device behaves as a diode, with the Sn homologue acting as the "p" side. The junction is extremely sensitive to illumination. A complete reversal of the diode polarity, the first observation of its kind, is seen when the junction is exposed to red laser light of 25 mW/cm(2) or larger power density. This finding opens up the possibility for a novel class of optoelectronic devices.

Amer Chemical Soc2017