Publications associées à Carbure de silicium

Young's modulus and creep of calcium-silicate-hydrate compacts measured by microindentation

Karen Scrivener, Zhangli Hu, Pietro Lura

In this paper, compacts of synthetic calcium silicate hydrate (C-S-H) with 0.8-1.5 calcium-to-silicon ratio (Ca/Si) and 30-80% porosity were prepared by one-direction cold pressing. The Young's modulus and the creep of C-S-H compacts were measured by micro ...

PERGAMON-ELSEVIER SCIENCE LTD2020

Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Yixing Chen, Gwénolé Jean Jacopin, Wei Liu, Camille Haller, Thomas Fjord Kjaersgaard Weatherley

We study the impact of non-radiative defects on Auger recombination in c-plane InGaN/GaN single quantum wells (SQWs) in the efficiency droop regime using high injection time-resolved photoluminescence. The defect density in the SQW is controlled by tuning ...

AMER INST PHYSICS2020

Near-junction heat spreaders for hot spot thermal management of high power density electronic devices

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Riyaz Mohammed Abdul Khadar, Mehdi Naamoun

Many high power (opto-) electronic devices such as transistors, diodes, and lasers suffer from significant hot spot temperature rises due to the high heat fluxes generated in their active area, which limits their performance, reliability, and lifetime. Emp ...

2019

Studying the wettability of Si and eutectic Si-Zr alloy on carbon and silicon carbide by sessile drop experiments

Ludger Weber, Alberto Ortona, Manoj Kondibhau Naikade

The contact angles of two different systems, molten silicon and a eutectic Si-8 at. pct Zr alloy and their evolution over timeon vitreous carbon and polycrystalline silicon carbide (SiC) substrates were investigated at 1500 degrees C under vacuum, as well ...

ELSEVIER SCI LTD2019

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Riyaz Mohammed Abdul Khadar, Mehdi Naamoun

In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization ...

2019

Numerical simulations of hole carrier selective contacts in p-type c-Si solar cells

Christophe Ballif, Andrea Ingenito, Philipp Friedrich Hermann Löper

This work presents a systematic analysis of the transport mechanism and surface passivation of tunneling oxide (SiO2)/p-type poly-silicon (poly-Si(p)) junctions applied to p-type crystalline silicon (c-Si) solar cells by means of TCAD numerical simulations ...

ELSEVIER2019

Transient current technique for charged traps detection in silicon bonded interfaces

Jean-Michel Sallese, Alessandro Mapelli, Didier Bouvet

Wafer bonding is an established technology for the manufacturing of silicon-on-insulator (SOI) substrates, microelectromechanical systems (MEMS) and microfluidic devices. Low temperature direct bonding techniques can be of particular interest for the fabri ...

2019

Catalyst Proximity-Induced Functionalization of h-BN with Quat Derivatives

Magalí Alejandra Lingenfelder, Gabriele Tocci, Bart Willem Stel, Huanyao Cun

Inert single-layer boron nitride (h-BN) grown on a catalytic metal may be functionalized with quaternary ammonium compounds (quats) that are widely used as nonreactive electrolytes. We observe that the quat treatment, which facilitates the electrochemical ...

2019

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Carbure de silicium

Young's modulus and creep of calcium-silicate-hydrate compacts measured by microindentation

Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime

Near-junction heat spreaders for hot spot thermal management of high power density electronic devices

Structural and microstructural studies on SiC-SiO2 ceramic composites

Studying the wettability of Si and eutectic Si-Zr alloy on carbon and silicon carbide by sessile drop experiments

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

Numerical simulations of hole carrier selective contacts in p-type c-Si solar cells

Transient current technique for charged traps detection in silicon bonded interfaces

Tri-gate technologies for high-performance power GaN devices

Catalyst Proximity-Induced Functionalization of h-BN with Quat Derivatives

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Chattez avec Graph Search

Studying the wettability of Si and eutectic Si-Zr alloy on carbon and silicon carbide by sessile drop experiments

Near-junction heat spreaders for hot spot thermal management of high power density electronic devices

Structural and microstructural studies on SiC-SiO2 ceramic composites

Numerical simulations of hole carrier selective contacts in p-type c-Si solar cells

Transient current technique for charged traps detection in silicon bonded interfaces

Tri-gate technologies for high-performance power GaN devices

Catalyst Proximity-Induced Functionalization of h-BN with Quat Derivatives

Young's modulus and creep of calcium-silicate-hydrate compacts measured by microindentation

Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon