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A thin InAs layer grown in a quasi-two-dimensional film over InP reorganizes into islands if left to anneal under arsine. This surface transformation is inhibited at lower arsine fluxes. With increasing temperature, the surface transformation is activated ...
After Zn diffusion into Si-doped GaAs (n almost-equal-to 1.5 X 10(18) cm-3), the Zn-diffused samples are annealed under different conditions: (i) in vacuum, (ii) in arsenic vapor, and (iii) with a Si3N4 mask capping the sample surface. The Zn concentration ...
N-type GaAs substrates have been exposed to zinc atmospheres at 600-800 deg.C and focused light from a Kr-ion laser at 647.1 nm. Etch pits are generated at optical densities of 0.2-10 KW/cm2 and exposure times of 5-60 minutes. They are characterised by a s ...
The behavior of arsenite (AsIII), arsenate (AsV), monomethylarsonate (MMA), dimethylarsinate (DMA), arsenobetaine (AsB) and arsenocholine (AsC) in pyrolytic graphite coated graphite (pyrocoated) tubes was studied. The influence of a tungsten carbide coatin ...
A thin InAs layer grown in a quasi-two-dimensional film over InP reorganizes into islands if left to anneal under arsine. This surface transformation is inhibited at lower arsine fluxes. With increasing temperature, the surface transformation is activated ...
