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The electronic structure of cis-bis(4,4'-dicarboxy-2,2'-bipyridine)bis(isothiocyanato)ruthenium(II) and of its ligand 2,2'-bipyridine-4,4'-dicarboxylic acid was studied with electron spectroscopy. Valence level spectra were studied with respect to photoele ...
The combination of internal photoemission and near-field optics is proposed as a generally applicable approach to study the lateral variations of solid interface properties such as energy barriers and electron-hole recombination rates. A successful test on ...
High-resolution core and valence band photoemission as well as photoinduced Auger spectra of metallic Sn, polycrystalline SnO and SnO2 ((110) natural single-crystal cassiterite and polycrystalline) samples were measured in order to give information on loca ...
We have investigated the intersubband scattering of electrons in GaAs quantum wells using luminescence up-conversion with 100-fs resolution. The decay time of the n=2 electron-to-heavy-hole transition (e,hh)(2) depends both on the excess energy of the char ...
The cathodoluminescence mode of the scanning electron microscope is used for the first time to investigate the lateral dependence of the electron-hole pair generation by the electron beam of the scanning electron microscope m semiconducting material. A mul ...
Sand erosion tests were performed on WC-Co and WC-CoCr coatings deposited by the high velocity oxy-fuel spraying method. Several analytical techniques, including X-ray diffraction, Auger electron spectroscopy and energy-dispersive spectroscopy in a transmi ...
Experimental Al KL(23)V and Ni LMM Auger and high-resolution valence band XPS spectra of Al3Ni and AlNi3 alloys are presented and compared to the corresponding spectra of pure metals. The spectra are interpreted in terms of the results of the discrete-vari ...
The process of ferredoxin reduction by photosystem I has been extensively investigated by flash-absorption spectroscopy in psaD and psaE deleted mutants from Synechocystis sp. PCC 6803. In both mutants, the dissociation constant for the photosystem I/ferre ...
We use photoluminescence and photoluminescence excitation experiments with and without magnetic field to study the electronic properties of InxGa1-xAs/GaAs quantum wells grown on vicinal (001) substrates. We analyze samples of a wide range of In contents ( ...
We propose a method for the quantitative evaluation of electron-beam-induced current profiles measured in normal-collector geometry across p-n junctions in GaAs/Al0.4Ga0.6As heterostructures. We obtain a theoretical expression, valid for all distances from ...
