Charge d'espace

Résumé

vignette|La foudre est la décharge des charges d'espace qui se sont accumulées dans les nuages. La charge d'espace est un nuage d'électrons situé dans un espace qui peut être un vide, un gaz, un liquide ou un solide. Le plus souvent, cet effet est rencontré dans le vide des tubes électroniques. Dans le vide Lorsqu'un objet métallique placé dans le vide est chauffé jusqu'à l'incandescence, l'énergie est suffisante pour que les électrons, agités, puissent quitter la surface du métal, formant un nuage d'électrons. Ce nuage est chargé négativement, et peut être attiré par n'importe quel objet chargé positivement environnant ; dans ce cas, le nuage est en fait un courant électrique circulant dans le vide. Cet effet fut d'abord observé par Thomas Edison, c'est pour cela qu'il est parfois appelé effet Edison. La charge d'espace est une propriété de tous les tubes à vide. Cela rend la conception des montages parfois plus facile ou parfois plus difficile. Par exemple, la charge d'

Source officielle

https://fr.wikipedia.org/wiki/Charge_d'espace

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Contact resistance effects in organic n-channel thin-film transistors

Reinhold Rödel

Organic thin-film transistors (TFTs) have undergone tremendous progress in the past few years. Their great potential in terms of mechanical flexibility, light weight, low-cost and large-area fabrication makes them promising candidates for novel electronic products, such as sensor arrays, radio-frequency identification tags and flexible displays. For the realization of these applications and to improve their performance it is necessary to miniaturize organic TFTs to dimensions of a few micrometers or even less. However, with such aggressive scaling, the device physics becomes more and more important. Especially the contact resistance at and close to the interface between the organic semiconductor and the source/drain metal limits the performance of the organic TFTs at miniaturized dimensions. In this thesis, the contact properties of bottom-gate, top-contact n-channel organic transistors are investigated using the gated four-probe (GFP) technique. The TFTs employ the small-molecule semiconductor N,N'-bis-(1H,1H-heptafluorobutyl)-1,7-dicyano-perylene-3,4:9,10-tetracarboxylic diimide (PDI-FCN2) and are fabricated on flexible plastic substrates. The transistors are air-stable and can be operated at low voltages of about 3 V, owing to a thin hybrid gate dielectric composed of aluminum oxide and a self-assembled molecular monolayer. The GFP method enabled a detailed investigation of the influence of a multitude of factors, including the gate-source and drain-source voltages, the contact length, the temperature and the contact metal, on the contact resistance. The contact properties are found to be very sensitive to the thickness of the organic semiconductor layer. In transistors in which this layer is relatively thin, ohmic contact resistances as small as about 0.6 Ohm cm were measured. In transistors with a relatively thick organic semiconductor layer, device physics becomes more complex and the current-voltage characteristics of the contact become nonlinear. Space-charge limited currents are identified as the probable origin of this nonlinear behavior. The good performance of the PDI-FCN2 transistors allows the realization of simple integrated circuits. Flexible organic complementary ring oscillators are fabricated and signal propagation delays per stage as short as 6 µs are demonstrated at a supply voltage of 3.6 V.

EPFL2016

Chargement

FIRST RESULTS OF SPACE CHARGE SIMULATIONS FOR THE NOVEL MULTI-TURN INJECTION

Matthieu George

Recently, a novelmulti-turn injection technique was proposed. It is based on beam merging via resonance crossing. The various beamlets are successively injected and merged back by crossing a stable resonance generated by non-linear magnetic fields. Space charge is usually a crucial effect at injection in a circular machine and it could have an adverse impact on the phase space topology required for merging the various beamlets. Numerical simulations were performed to assess the stability of the merging process as a function of injected beam charge. The results are presented and discussed in this paper.

2010

Chargement

Phosphorene nanoribbons (PNRs) have been widely predicted to exhibit a range of superlative functional properties; however, because they have only recently been isolated, these properties are yet to be shown to translate to improved performance in any application. PNRs show particular promise for optoelectronics, given their predicted high exciton binding energies, tunable bandgaps, and ultrahigh hole mobilities. Here, we verify the theorized enhanced hole mobility in both solar cells and space-charge-limited-current devices, demonstrating the potential for PNRs improving hole extraction in universal optoelectronic applications. Specifi- cally, PNRs are demonstrated to act as an effective charge-selective interlayer by enhancing hole extraction from polycrystalline methylammonium lead iodide (MAPbI(3)) perovskite to the poly(triarylamine) semiconductor. Introducing PNRs at the hole-transport/MAPbI(3) interface achieves fill factors above 0.83 and efficiencies exceeding 21% for planar p-i-n (inverted) perovskite solar cells (PSCs). Such efficiencies are typically only reported for single-crystalline MAPbI(3)-based inverted PSCs. Methylammonium-free PSCs also benefit from a PNR interlayer, verifying applicability to architectures incorporating mixed perovskite absorber layers. Device photoluminescence and transient absorption spectroscopy are used to demonstrate that the presence of the PNRs drives more effective carrier extraction. Isolation of the PNRs in space-charge-limited-current hole-only devices improves both hole mobility and conductivity, demonstrating applicability beyond PSCs. This work provides primary experimental evidence that the predicted superlative functional properties of PNRs indeed translate to improved optoelectronic performance.

AMER CHEMICAL SOC2021

Chargement

Contact resistance effects in organic n-channel thin-film transistors

Reinhold Rödel

EPFL2016