Multiferroïsme | EPFL Graph Search

vignette|Nombre de publications contenant le mot clé "Multiferroic" selon le site Web of Science vignette|Les multiferroïques sont à l'intersection des trois classes ferroïques soit les ferroélastiques, les ferromagnétiques et les ferroélectriques. Chaque classe est caractérisée par son cycle d'hystérésis. Le multiferroïsme est la propriété de matériaux présentant simultanément plusieurs propriétés ferroïques dans une seule phase (par exemple, des propriétés de ferroélectricité, ferromagnétisme, ferroélasticité). Les matériaux antiferromagnétiques, ferrimagnétiques, ferrotoroïdiques ou hélimagnétiques sont également qualifiés de multiferroïques. Seuls quelques matériaux multiferroïques (monophasés) sont connus. Cela vient notamment du fait que les matériaux classiquement connus pour leur propriétés ferroélectriques, des pérovskites BaTiO3, ont des orbitales 3d vides, et ne portent donc pas de moment magnétique. En effet, le magnétisme provient des orbitales dn partiellement remplies

Towards room-temperature deterministic ferroelectric control of ferromagnetic thin films

Zhen Huang

The persisting demand of higher computing power and faster information processing keeps pushing scientists and engineers to explore novel materials and device structures. Within emerging functional materials, there is a focus on multiferroics materials and material-systems possessing both ferroelectric and ferromagnetic orders. Multiferroics with two order parameters coupled through a magnetoelectric interaction are of particular interest for novel information processing technologies. This thesis explores a promising concept of magnetoelectric multiferroic heterostructure incorporating separate ferroelectric and ferromagnetic thin layers with field-effect-mediated coupling through the heterointerface. The major issues related to ferroelectric control of ferromagnetism in multiferroic heterostructures addressed in this thesis include non-volatile magnetoelectric coupling at room temperature, deterministic switching of magnetization via polarization reversal, ferroelectric control of dynamics of magnetic domains and integration of ferroelectric gates on magnetic channels. The major accomplishments of this thesis are the following: Non-volatile ferroelectric control of magnetic properties has been demonstrated in ultra-thin Co layers at room temperature. The ferromagnetic transition Curie temperature, magnetic anisotropy energy and magnetic coercivity are shown to be switchable via the persistent field effect associated with the ferroelectric polarization. The magnitude of the effect is comparable or exceeds the results observed using the conventional (non-ferroelectric) gates. Local control of individual magnetic domain nucleation and propagation in Co channels by creating new ferroelectric domains has been achieved at the ambient conditions. The microscopic ferroelectric domains written on poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] ferroelectric polymer gate projected onto the magnetic channel changing locally the magnetic anisotropy energy, and consequently altering magnetic domain dynamics. Therefore it was possible to promote/impede magnetic domain nucleation and significantly change the domain wall velocity using a non-destructive and reversible procedure of ferroelectric domain writing. Non-volatile control of anisotropic magnetoresistance (AMR) has been demonstrated on diluted magnetic semiconductor (Ga,Mn)(As,P) thin films with integrated P(VDF-TrFE) ferroelectric gate. The field effect induced by the ferroelectric gate has shown the capability to strongly modulate the AMR behavior. Profound qualitative changes of the nature of AMR has been observed, including complete on/off switching of the crystalline component of AMR in (Ga,Mn)(As,P). A workflow for fabrication of integrated FET-type structures comprising a magnetic metal or semiconductor magnetic channel and ferroelectric polymer gate has been successfully developed. Different approaches for enhancement of ferroelectric gate operation were explored including integration of highly resistive hydrophobic interfacial layer and change of polymer composition for lower leakage. A significant increase of the non-volatile gate effect magnitude compared to the state of art was reached via improved quality of the ferroelectric/ferromagnetic interface.

EPFL2015

Effect of Magnetic Ion Doping on Structural, Electric and Relaxor Properties of Pb (Fe2/3W1/3) O-3 Multiferroic Ceramics

Barbara Maraston Fraygola

Single-phase Pb(Fe2/3W1/3)O3 (PFW) multiferroic ceramics doped with magnetic ions were fabricated using a modified B-site precursor method. Dielectric response was investigated over a wide range of temperature and frequency. Doping did not modify the characteristic temperatures (T-C, T-N) and the order at ferroelectric phase transition, keeping the relaxor properties. However, the leakage current and resistivity of PFW have been improved with the substitutions: 1 mol% MnO2 addition caused a significant increase in the electric resistivity of PFW ceramics, around 7 orders of magnitude.

Univ Fed Sao Carlos, Dept Engenharia Materials2014

Towards room-temperature deterministic ferroelectric control of ferromagnetic thin films

Zhen Huang

EPFL2015