Concept

Semiconductor consolidation

Publications associées (57)

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Integration of Engineered Source and Drain Extensions in Double Gate Mosfet with Sub-32nm Channel Length

Jyotshna Bhandari

Since the advent of CMOS technology, the semiconductor industry has been successful in achieving continuously improved performance. The feature size of the most important electronic device, the Metal Oxide Semiconductor Field Effect Transistor (MOSFET), ha ...

EPFL2011

Formation of substoichiometric GeOx at the Ge-HfO2 interface

Alfredo Pasquarello, Peter Broqvist, Jan Felix Binder

The stability of oxygen vacancies across the Ge-HfO2 interface is studied through semilocal and hybrid density-functional calculations. On the semiconductor side, the formation energies are obtained for substoichiometric GeOx of varying x through the use o ...

American Institute of Physics2010

Reversed processing of dry photoresist: application to the encapsulation of chemical sensors

Nico de Rooij, Danick Briand, Jérôme Courbat

A generic method for the reverse processing of dry photoresist is proposed. The technique is based on the lamination of pre-patterned polymeric structures on the pre-existing devices. The concept is illustrated with the encapsulation at the foil level of g ...

Elsevier Science, Reg Sales Off, Customer Support Dept, 655 Ave Of The Americas, New York, Ny 10010 Usa2010

Nano-Electro-Mechanical Switches Based on Carbon Nanotubes Arrays

Donatello Acquaviva

In the last forty years the semiconductor industry focused on the downscaling process of the CMOS (Complementary Metal-Oxide-Semiconductor) technology, trying to follow as much as possible the empirical Moore's Law. In the last five years this trend has be ...

EPFL2010

Foil level packaging of a chemical gas sensor

Nico de Rooij, Danick Briand, Jérôme Courbat

A generic method for the packaging of transducers at the foil level is proposed and was demonstrated on chemical gas sensors made on a plastic foil. The processing was based on the lamination of pre-patterned polymeric structures on the fabricated devices ...

Institute of Physics2010

Depleted-Heterojunction Colloidal Quantum Dot Solar Cells

Michael Graetzel, Mohammad Khaja Nazeeruddin, Ines Raabe, Xiaoyan Wang

Colloidal quantum dot (CQD) photovoltaics combine low-cost solution processability with quantum size-effect tunability to match absorption with the solar spectrum. Rapid recent advances in CQD photovoltaics have led to impressive 3.6% AM1.5 solar power con ...

American Chemical Society2010

Mechanically tuneable microoptical structure based on PDMS

Jürgen Brugger, Luis Guillermo Villanueva Torrijo, Victor Javier Cadarso Busto

A PDMS based tuneable microoptical system fabricated merging deep reactive ion etching, SU-8 and soft lithography, with a low-cost (mass-production), simple and highly repetitive technology, is presented. This system consists on a structure of two microlen ...

2009

Flip chip bonding technologies for hybrid integration

Hybrid integration and especially the packaging of microelectromechanical systems (i.e. MEMS) cannot rely on standardised packaging solutions due to the diversity of microsystems. As an example, the packaging requirements of a pressure sensor are different ...

Institut de Microtechnique, Université de Neuchâtel2009

Physical aspects of colossal dielectric constant material CaCu3Ti4O12 thin films

Paul Muralt

The underlying physical mechanism of the so-called colossal dielectric constant phenomenon in CaCu3Ti4O12 CCTO thin films were investigated by using semiconductor theories and methods. The semiconductivity of CCTO thin films originated from the acceptor de ...

2009

Semiconductor Image Sensing

Peter Seitz, Nicolas Blanc

Silicon is an excellent detector material for electromagnetic radiation in the wavelength range of 0.1 to 1000 nm. In the visible spectral range (400-700 nm), external quantum efficiencies approaching 100% are obtained. When combined with the amazing minia ...

Springer2008