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A systematic study was carried out to assess property changes in CaCu3Ti4O12 thin films upon annealing in air in order to evaluate the impact of oxygen vacancies on their colossal dielectric constant behavior. Highly preferentially oriented thin-film sampl ...
An analytical calculation of the acoustic transmission loss of sound propagating through a thin cylindrically curved piezoelectric membrane, which is rigidly clamped at its straight ends, is presented. The membrane is placed inside an acoustic tube and con ...
This paper presents the control design of a multilevel modular DC/DC converter for regenerative braking systems in mobile applications. The proposed control scheme is able to control the energy flow between supercapacitors and the DC link and equalizing th ...
This paper presents a novel high-frequency tunable band-stop filter concept based on a single MEMS capacitive shunt device which uses meander arm anchoring inductors and with a total size of 300 × 600 μm. Tuning ranges of the central frequency in the order ...
Recently, there is a growing interest in developing so-called "smart" RFID tags for logistic applications. These smart tags incorporate sensing devices to monitor environmental parameters such as humidity and temperature throughout the supply chain. To ful ...
Rising interest in multilevel applications has triggered new research activities. This paper proposes a novel multilevel power electronics building block (PEBB) for the five-level active neutral point clamped (ANPC) multilevel voltage source inverter. The ...
Institute of Electrical and Electronics Engineers2010
Ferroelectric polarization switching in epitaxial (110) BiFeO3 films is studied using piezoresponse force microscopy of a model in-plane capacitor structure. The electrode orientation is chosen such that only two active domain variants exist. Studies of th ...
This work reports the first complete experimental demonstration and investigation of subthreshold swing, SS, smaller than 60 mV/decade, at room temperature, due to internal voltage amplification in FETs with a Metal-Ferroelectric-Metal-Oxide gate stack. Th ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2010
Integrated Hall devices have the great advantage, over other magnetic sensors, that they can be fully fabricated by a standard CMOS process. However they are known to have a relatively large offset (i.e. residual voltage at zero magnetic field). Techniques ...
In this paper, a new energy storage system (ESS) is developed for an innovative subway without supply rail between two stations. The ESS is composed of a supercapacitor bank and a braking resistor. An inversion-based control of the ESS is deduced from the ...
Institute of Electrical and Electronics Engineers2010