Publications associées à Bloc fonctionnel

Thermally induced voltage shift in capacitance-voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures

Nicolas Grandjean, Jean-François Carlin

The Ni/Al2O3/InAlN/AlN/GaN metal-oxide-semiconductor heterostructure (MOS-H) is investigated using capacitance-voltage and capacitance-time characteristics in the temperature range of 25-300 degrees C. An anomalous positive voltage shift of the capacitance ...

2009

Thermally Stable Distributed MEMS Phase Shifter for Airborne and Space Applications

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia

This paper presents an in-depth study of the design, modelling, circuit parameter extraction and characterization of a distributed MEMS digital microwave phase shifter. Bridge-type digital capacitors periodically loaded on a 5 mm CPW (with an actuation vol ...

2008

Electrical model of the Alfvén eigenmode exciter on JET

Ambrogio Fasoli, Duccio Testa, Theodoros Panis

The TAE antenna system on JET is used to drive intermediate and high n Alfvén Eigenmodes (AEs) into the plasma so as to study their properties and estimate their stability by measuring their damping rates as a function of the various plasma parameters. In ...

2008

Three- and four-element Windkessel models: assessment of their fitting performance in a large cohort of healthy middle-aged individuals

Nikolaos Stergiopoulos, Patrick Segers, Nico Westerhof

Lumped-parameter models are used to estimate the global arterial properties by fitting the model to measured (aortic) pressure and flow. Different model configurations coexist, and it is still an open question as to which model optimally reflects the arter ...

2008

Impact of Lateral Nonuniform Doping and Hot Carrier Injection on Capacitance Behavior of High Voltage MOSFETs

Mihai Adrian Ionescu, Michel Declercq, Yogesh Singh Chauhan

A detailed analysis of capacitance behavior of high-voltage MOSFET (HV-MOS), for example, LDMOS, using device simulation is made. The impact of lateral nonuniform doping and drift region are separately analyzed. It is shown that the peaks in C-GD and C-GS ...

2008

Impact of lateral non-uniform doping and hot carrier degradation on capacitance behavior of high voltage MOSFETs

Mihai Adrian Ionescu, Michel Declercq, Yogesh Singh Chauhan

In this work, a detailed analysis of capacitance behavior of high voltage MOSFET (HV-MOS) e.g. LDMOS, VDMOS using device simulation is made. The impact of lateral non-uniform doping and drift region is separately analyzed. It is shown that the peaks in C-G ...

Ieee Service Center2008

Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic

Mihai Adrian Ionescu, Dimitrios Tsamados, Yogesh Singh Chauhan, Christoph Eggimann

An analytical model for the suspended-gate field-effect transistor (SGFET), dedicated to the dc analysis of SGFET logic circuits, is developed. The model is based on the depletion approximation and expresses the pull-in voltage, the pull-out voltage, and t ...

2008

Inelastic wide-column models for U-shaped reinforced concrete walls

Katrin Beyer, Alessandro Dazio

Although core structures are often used in reinforced concrete buildings as members providing lateral strength and stiffness, experimental and numerical studies on their inelastic behavior are scarce. In an experimental program recently completed at the ET ...

Taylor & Francis2008

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Bloc fonctionnel

Thermally induced voltage shift in capacitance-voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures

Horizontal HALL devices: A lumped-circuit model for EDA simulators

Thermally Stable Distributed MEMS Phase Shifter for Airborne and Space Applications

Electrical model of the Alfvén eigenmode exciter on JET

Three- and four-element Windkessel models: assessment of their fitting performance in a large cohort of healthy middle-aged individuals

Transient Thermal Model of a Medium Frequency Power Transformer

Impact of Lateral Nonuniform Doping and Hot Carrier Injection on Capacitance Behavior of High Voltage MOSFETs

Impact of lateral non-uniform doping and hot carrier degradation on capacitance behavior of high voltage MOSFETs

Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic

Inelastic wide-column models for U-shaped reinforced concrete walls

Graph Chatbot

Chattez avec Graph Search

Horizontal HALL devices: A lumped-circuit model for EDA simulators

Thermally induced voltage shift in capacitance-voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures

Electrical model of the Alfvén eigenmode exciter on JET

Thermally Stable Distributed MEMS Phase Shifter for Airborne and Space Applications

Transient Thermal Model of a Medium Frequency Power Transformer

Impact of Lateral Nonuniform Doping and Hot Carrier Injection on Capacitance Behavior of High Voltage MOSFETs

Three- and four-element Windkessel models: assessment of their fitting performance in a large cohort of healthy middle-aged individuals

Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic

Impact of lateral non-uniform doping and hot carrier degradation on capacitance behavior of high voltage MOSFETs

Inelastic wide-column models for U-shaped reinforced concrete walls