Thermocouple

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Publications associées (28)

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Doping effect on the thermoelectric transport properties of HfTe5

Jean-Philippe Ansermet, Haiming Yu, Junfeng Hu

We studied the influence of doping HfTe5 with 5% Ti on electric (resistivity and the Hall effect) and thermoelectric transport properties (the Seebeck coefficient, magneto-thermoelectric power, and Nernst effect). The properties of 5% Ti-doped HfTe5 do not ...

2019

A concept of wireless and passive very-high temperature sensor

Paul Muralt, Ramin Matloub Aghdam, Andrea Mazzalai

There is a need for sensors capable operating at temperatures above 1000 degrees C. We describe an innovative sensor that might achieve this goal. The sensor comprises two main elements: a thermocouple and a surface acoustic wave (SAW) strain sensor. The c ...

Amer Inst Physics2017

Thermo-mechanical volume change behaviour of Opalinus Clay

Lyesse Laloui, Alessio Ferrari, Valentina Favero

The paper examines the thermo-mechanical volume change behaviour of Opalinus Clay in relation to different stress conditions and overconsolidation ratio (OCR) values and evaluates the impact of temperature on some hydro-mechanical properties of this materi ...

Elsevier2016

Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

Nicolas Grandjean, Marco Malinverni, Denis Martin, Hironori Okumura

We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 degrees C) allows decreasing the incorporation of donor-like defects (

Amer Inst Physics2016

Pressure-tuned Transport Properties of Novel Iron-based Superconductors and Topological Insulators

Andrea Pisoni

The majority of interactions in solids strongly depend on the interatomic distances. The application of pressure changes the lattice parameters and modifies the electronic and the phononic energy spectra of a material avoiding some of the undesirable effec ...

EPFL2016

Room temperature Si-Ti thermopile THz sensor

Danick Briand

In this paper, we present the conception, fabrication and characterization of a thermopile designed to detect terahertz electromagnetic fields at room temperature. The thermopile is made of four doped silicon/titanium thermocouples. The absorber consists o ...

Springer Verlag2015

Tuning of the Thermoelectric Figure of Merit of CH3NH3MI3 (M=Pb,Sn) Photovoltaic Perovskites

László Forró, Davor Pavuna, Endre Horvath, Bálint Náfrádi, Andrea Pisoni, Massimo Spina, Xavier François Mettan, Péter Krisztián Matus, Riccardo Pisoni

The hybrid halide perovskites, the very performant compounds in photovoltaic applications, possess large Seebeck coefficient and low thermal conductivity, making them potentially interesting high figure of merit (ZT) materials. For this purpose, one needs ...

American Chemical Society2015

The Role of Transport Agents in MoS2 Single Crystals

László Forró, Arnaud Magrez, Bálint Náfrádi, Arnaud Walter, Helmuth Berger, Andrea Pisoni, Jacim Jacimovic

We report resistivity, thermoelectric power, and thermal conductivity of MoS2 single crystals prepared by the chemical vapor transport (CVT) method using I-2, Br-2, and TeCl4 as transport agents. The material presents low-lying donor and acceptor levels, w ...

Amer Chemical Soc2015

Effect of Heat Current on Magnetization Dynamics in Magnetic Insulators and Nanostructures

Francesco Antonio Vetrò

The term "spin caloritronics" defines a novel branch of spintronics that focuses on the interplay between electron spins with heat currents. In the frame of this research area, this thesis is aimed at investigating the effect of a heat current on magnetiza ...

EPFL2015

DC and AC scanning thermal microscopy using micro-thermoelectric probe

Danick Briand

A scanning thermal microscope working in passive mode is described. This tool uses a thermocouple probe and is presented as a thermal imaging system. The surface temperature distribution of a thermal micro-component is presented. We point out the capacity ...

Old City Publishing2014

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Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

Nicolas Grandjean, Marco Malinverni, Denis Martin, Hironori Okumura

We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 degrees C) allows decreasing the incorporation of donor-like defects (

Amer Inst Physics2016