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We introduce an atomistic model structure of the Si(1 0 0)-SiO2 interface which incorporates atomic-scale information from a variety of experimental probes. The interface model consists of a disordered, topologically perfect oxide network matching the Si s ...
We investigate the dielectric permittivity of SiO2 on Si(100) substrates using a first-principles approach. It is shown that both the static and high-frequency dielectric constants of the oxide overlayer increase when the oxide thickness is reduced. This b ...
The transformation from pseudomorphic to dislocated and back to pseudomorphic growth with increasing coverage is reported for molecular beam epitaxy of Ag on Pt(111). Below a critical size of 200 Angstrom two-dimensional Ag islands grow coherently strained ...
We present a combined angle-resolved photoemission spectroscopy and resistivity study of the model Fermi liquid system 1T-TiTe2. From the analysis of the quasiparticle spectral line shape we identify and separately evaluate the electron-electron. electron- ...
The stray field of permalloy (Py) micromagnets has been measured by means of a micrometer-sized Hall magnetometer incorporating a ballistic two-dimensional electron system. In particular, ferromagnetic specimens have been investigated where two micromagnet ...
Institute of Electrical and Electronics Engineers2002
We have used variable-temperature scanning tunneling microscopy to study the aggregation of two-dimensional Ag clusters on Pt(111). A transition from randomly ramified to dendritic fractal growth is observed in the diffusion-limited regime. Atomic-scale ob ...
Inelastic neutron scattering, susceptibility, and high-field magnetization identify LiCuVO4 as a nearest-neighbour ferromagnetic, next-nearest-neighbour frustrated, quasi-one-dimensional helimagnet, which is largely influenced by quantum fluctuations. Comp ...
We report on the epitaxial growth of high quality GaN films on Si(111) substrates by molecular beam epitaxy using ammonia. The surface morphology and crystallinity of thick undoped GaN films are characterized by reflection high-energy electron diffraction ...
Platinum silicide films are widely used in silicon devices for ohmic and Schottky contacts. It has been demonstrated in the recent years that Schottky barriers employing ultra-thin platinum silicide films (thickness < 10 nm) are useful for photodetection i ...
Al0.3Ga0.7As:Si/GaAs modulation-doped field-effect transistor-type heterostructures were grown using two different growth temperatures (500 and 620 degrees C) and three doping modes (delta-doping, pulse-doping, and uniform-doping). Deep level transient spe ...