Publications associées à Instrument amplifier

Three-wave-mixing quantum-limited kinetic inductance parametric amplifier operating at 6 T near 1 K

Pasquale Scarlino, Simone Frasca, Guillaume Beaulieu, Camille René Charles Roy

Parametric amplifiers play a crucial role in modern quantum technology by enabling the enhancement of weak signals with minimal added noise. Traditionally, Josephson junctions have been the primary choice for constructing parametric amplifiers. Nevertheles ...

American Physical Society (APS)2024

Amorphous Silicon Based Microchannel Plates for Time-of-Flight Positron Emission Tomography

Samira Alexandra Frey

Microchannel plates fabricated from hydrogenated amorphous silicon (AMCPs) are a promising alternative to conventional lead glass microchannel plates. Their main advantages lie in their cheaper and more flexible fabrication processes, allowing for adaptabl ...

EPFL2023

Nanoplasma-based Millimiter-wave Modulators on a Single Metal Layer

Elison de Nazareth Matioli, Mohammad Samizadeh Nikooytabalvandani

Fundamental constraints imposing power-frequency trade-offs in conventional electronics have stimulated research on alternative technologies for millimeter-wave and sub-millimeter-wave applications. In this work, we use the picosecond threshold firing of n ...

Institute of Electrical and Electronics Engineers2022

Science on the Summit: Exploring Scientific Tourism Through the Lens of Eighteenth Century Mountain Ascents

Jérôme Baudry, Simon François Dumas Primbault, Ion-Gabriel Mihailescu

This contribution argues that a particular scientific context made summits a place of interest for eighteenth-century travelers. This development is connected to two particular scientific practices. First, the challenges raised by making the barometer into ...

IGA-ASSOC DIFFUSION RECHERCHE ALPINE2022

Measurements and analysis of different front-end configurations for monolithic SiGe BiCMOS pixel detectors for HEP applications

Edoardo Charbon

This paper presents a small-area monolithic pixel detector ASIC designed in 130 nm SiGe BiCMOS technology for the upgrade of the pre-shower detector of the FASER experiment at CERN. The purpose of this prototype is to study the integration of fast front-en ...

IOP Publishing Ltd2021

Beyond Tolerance Factor: Using Deep Learning for Prediction Formability of ABX3 Perovskite Structures

Mohammad Khaja Nazeeruddin, Tom Theodorus Antonius Lummen, Valentin Ianis Emmanuel Queloz, Alexander Fedorovskiy

Deep learning (DL) is a modern powerful instrument for multiple purposes, including classification. In this study, this technique is applied to the task of perovskites formability. A commonly known perovskite dataset is used to try to make an instrument su ...

2021

Combining active and passive acoustic methods to image hydraulic fracture growth in laboratory experiments

Brice Tanguy Alphonse Lecampion, Seyyedmaalek Momeni, Dong Liu

We combine active and passive acoustic measurements to improve the spatio- temporal imaging of hydraulic fracture growth performed under true triaxial confinement in the laboratory. 64 active piezo-electric transducers (54 P waves, 10 S waves) work in sour ...

IOP2021

Performance of chip-scale optical frequency comb generators in coherent WDM communications

Tobias Kippenberg

Optical frequency combs have the potential to become key building blocks of wavelength-division multiplexing (WDM) communication systems. The strictly equidistant narrow-band spectral lines of a frequency comb can serve either as carriers for parallel WDM ...

2020

On the effect of linear feedback and parametric pumping on a resonator's frequency stability

Luis Guillermo Villanueva Torrijo

Resonant sensors based on micro- and nano-electro mechanical systems (M/NEMS) are ubiquitous in many sensing applications due to their outstanding performance capabilities, which are directly proportional to the quality factor (Q) of the devices. We addres ...

2020

AlGaN/GaN Nanowires: from Electron Transport to RF Applications

Giovanni Santoruvo

Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...

EPFL2020