Windows 7 | EPFL Graph Search

Windows 7 (précédemment connu en tant que Blackcomb et Vienna) est un système d'exploitation de la société Microsoft, sorti le et successeur de Windows Vista. Bien que le système s'appelle Windows 7, il s'agit de la version NT 6.1. Windows 7 est progressivement remplacé par Windows 8 à partir du , le support de Windows 7 RTM a pris fin le tandis que la version SP1 a vu son support standard se terminer le et a vu son support étendu se terminer le . Cette version de Windows reprend l’acquis de Windows Vista tout en apportant de nombreuses modifications, notamment par divers changements au niveau de l’interface et de l’ergonomie générale, un effort particulier pour la gestion transparente des machines mobiles et le souci d’améliorer les performances globales du système (fluidité, rapidité d’exécution même sur des systèmes moins performants, tels les netbooks) par rapport à son prédécesseur. En i

Distinguishing Sitting and Standing Activities Using a Wearable Barometric Pressure Monitor

Kamiar Aminian, Alan Kevin Bourke, Julien Chardonnens, Anisoara Ionescu, Fabien Massé

Recent advancements in wearable inertial sensor technology have enabled extensive research into activity classification. However, the distinction between the sitting and standing activities using trunk-worn wearable monitoring systems remains challenging, calling for additional sources of information such as altitude change. The aim of this study is to demonstrate the suitability of barometric pressure, an absolute estimate of sensor altitude, for distinguishing between sitting and standing (STS), as part of a wearable system. This barometric pressure sensor, the MS5611-BA01 from Measurement Specialties (CH), was integrated in a comfortable, miniaturized wearable inertial sensor device suitable for improved long-term activity recognition. The time evolution of the different modalities is displayed in Figure 1. A pilot study was conducted with 7 healthy volunteers (6 Males and 1 Female / Age: 27.8±2.1 years / BMI: 23.9±4.5 / Height: 1.80±0.075 m). Subjects were recorded performing a set of activities of daily-life including static postures (e.g., sitting or standing), postural transitions (e.g sit-to-stand, stand-to-sit) and dynamic activities (walking, climbing up/down stairs) in both indoor and outdoor real-world conditions. It enabled discriminating actual STS transitions from stationary postures with accuracies of 99.5% and 98% using averaging windows of Δt_average =4.16s and Δt_average =0.32s respectively. It is also capable of completely discriminating between Sit-to-Stand and Stand-to-Sit transitions.

2013

SAT-Based Area Recovery in Structural Technology Mapping

Bruno Schmitt Antunes

This paper proposes a fast SAT-based algorithm for recovering area applicable to an already technology mapped circuit. The algorithm considers a sequence of relatively small overlapping regions, called windows, in a mapped network and tries to improve the current mapping of each window using a SAT solver. Delay constraints are considered by interfacing the SAT solver with a timer. Experimental results are given for benchmarks that have been mapped already into 6-LUTs by a high-effort area-only synthesis/mapping flow. The new mapper starting from these results, many of which represented the best known area results at the time, achieved an additional average area reduction of 3-4%, while for some benchmarks the area reduction exceeded 10%. Runtime for any example was only a few seconds.

ASSOC COMPUTING MACHINERY2018

Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)

Oguz Tolga Celik, Cecilia Giovinazzo, Yusuf Leblebici, Carlo Ricciardi, Jury Sandrini, Elmira Shahrabi

Resistive-switching random access memory (ReRAM) technologies are nowadays a good candidate to overcome the bottleneck of Von Neumann architectures, taking advantage of their logic-in-memory capability and the ability to mimic biological synapse behavior. Although it has been proven that ReRAMs can memorize multibit information by the storage of multiple internal resistance states, the precise control of the multistates, their nonvolatility, and the cycle-to-cycle reliability are still open challenges. In this study, the analog resistance modulation of Pt/HfO2/Ti/TiN devices is obtained and studied in response to different programming stimuli, linking the electrical response to the internal dynamics of the ReRAM cells. The resistance modulation during RESET operation is explained by the progressive dissolution of the conducting filament, whose switching kinetics is inspected in detail, describing the filament evolution during voltage sweep measurements and under the effect of 1 mu s pulses. Exploiting the gradual nature of the RESET process, which is an intrinsic property of our devices, a linear resistance modulation over the wide operating window of 10(3) is obtained by negative pulse ramping. The intermediate resistance states are characterized by small spatial and temporal variability and stable retention over time. To explore the synaptic long-term plasticity properties, the resistance variation over 10(2) consecutive depression-potentiation cycles is presented and up to 15 discrete distinguishable states are defined through the evaluation of the maximum step-to-step variability. The linear resistance modulation over a wide resistance window coupled with the stable retention of intermediate states represents a fundamental step forward to enhance HfO2 ReRAM performance in neuromorphic applications.

AMER CHEMICAL SOC2019

Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)

Oguz Tolga Celik, Cecilia Giovinazzo, Yusuf Leblebici, Carlo Ricciardi, Jury Sandrini, Elmira Shahrabi

AMER CHEMICAL SOC2019