Publications associées à Ballistic conduction

Mobility of two-dimensional materials from first principles in an accurate and automated framework

Nicola Marzari, Marco Gibertini, Davide Campi, Thibault Daniel Pierre Sohier

We present a first-principles approach to compute the transport properties of 2D materials in an accurate and automated framework. We use density-functional perturbation theory in the appropriate bidimensional setup with open-boundary conditions in the thi ...

AMER PHYSICAL SOC2018

Surface-to-volume ratio controls the radiation of stratified plasmonic antennas

Olivier Martin, Christian Santschi, Banafsheh Abasahl

Surface plasmons are excited at a metal/dielectric interface, through the coupling between conduction electrons and incident photons. The surface plasmon generation is therefore strongly determined by the accessibility of the surface to the incoming electr ...

2017

In-Plane-Gate GaN Transistors for High-Power RF Applications

Elison de Nazareth Matioli, Giovanni Santoruvo

In-plane-gatefield-effect transistors (IPGFETs) offer an innovative device architecture in which the channel conductivity is modulated by the electric field from the 2D electron gas in the two adjacent in-plane gates, isolated by etched trenches. The plana ...

2017

Tuning the response of non-allowed Raman modes in GaAs nanowires

Anna Fontcuberta i Morral, Federico Matteini, Esther Alarcon Llado, Emanuele Uccelli, Francesca Amaduzzi, Hubert Hautmann

We report on the use of photonic resonances in Raman spectroscopy on single nanowires for the enhancement of forbidden modes and the study of the interaction of phonons with free-carriers. This is achieved by suspending nanowire over a trench and detecting ...

Iop Publishing Ltd2016

Current-Induced Spin Polarization in Topological Insulator-Graphene Heterostructures

Klaus Kern, Marko Burghard, Alexander Ronald Hoyer, Kristina Vaklinova

Further development of the field of all-electric spintronics requires the successful integration of spin transport channels with spin injector/generator elements. While with the advent of graphene and related 2D materials high performance spin channel mate ...

Amer Chemical Soc2016

Role of the gate in ballistic nanowire SOI MOSFETs

Christian Enz, Jean-Michel Sallese, Anurag Mangla

In this paper we report the results of Monte-Carlo simulations performed on double-gate ballistic MOSFETs with a geometry such that the gates overlap only a fraction of the channel. We present a qualitative analysis of the simulation results highlighting t ...

Elsevier2015

Room-Temperature Ballistic Transport in III-Nitride Heterostructures

Elison de Nazareth Matioli

Room-temperature (RT) ballistic transport of electrons is experimentally observed and theoretically investigated in III-nitrides. This has been largely investigated at low temperatures in low band gap III-V materials due to their high electron mobilities. ...

American Chemical Society2015

Hematite photoelectrodes for water splitting: evaluation of the role of film thickness by impedance spectroscopy

Kevin Sivula, Florian Le Formal

The electrochemical behavior of alpha-Fe2O3 photoelectrodes prepared by spray pyrolysis with different thicknesses was examined under dark and illumination conditions. The main charge transport phenomena occurring in the PEC cell photoelectrodes were chara ...

Royal Soc Chemistry2014

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Ballistic conduction

Mobility of two-dimensional materials from first principles in an accurate and automated framework

Surface-to-volume ratio controls the radiation of stratified plasmonic antennas

In-Plane-Gate GaN Transistors for High-Power RF Applications

Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures

Tuning the response of non-allowed Raman modes in GaAs nanowires

Current-Induced Spin Polarization in Topological Insulator-Graphene Heterostructures

Role of the gate in ballistic nanowire SOI MOSFETs

Room-Temperature Ballistic Transport in III-Nitride Heterostructures

Hematite photoelectrodes for water splitting: evaluation of the role of film thickness by impedance spectroscopy

Tri-gate silicon nanowire transistors for ultra-low pH resolution and improved scalability

Graph Chatbot

Chattez avec Graph Search

Mobility of two-dimensional materials from first principles in an accurate and automated framework

Surface-to-volume ratio controls the radiation of stratified plasmonic antennas

Tuning the response of non-allowed Raman modes in GaAs nanowires

Room-Temperature Ballistic Transport in III-Nitride Heterostructures

Current-Induced Spin Polarization in Topological Insulator-Graphene Heterostructures

In-Plane-Gate GaN Transistors for High-Power RF Applications

Role of the gate in ballistic nanowire SOI MOSFETs

Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures

Hematite photoelectrodes for water splitting: evaluation of the role of film thickness by impedance spectroscopy

Tri-gate silicon nanowire transistors for ultra-low pH resolution and improved scalability