Publications associées à Point-contact transistor

2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope

Nicola Marzari, Davide Campi, Cédric Klinkert

Due to their remarkable properties, single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially transition metal di ...

AMER CHEMICAL SOC2020

Output Capacitance Losses in Wide-Band-Gap Transistors: A Small-Signal Modeling Approach

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera

Wide-band-gap (WBG) power semiconductor devices are gaining an increasing interest in power circuits, as they exhibit a low specific ON-resistance (RON) while providing a high blocking voltage. The energy dissipation corresponding to resonantly charging an ...

2020

Measurement of Large-Signal Coss and Coss Losses of Transistors Based on Nonlinear Resonance

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera

In this letter, we present a new measurement technique to evaluate the large-signal output capacitance ( COSS ) of transistors as well as the COSS energy dissipation ( EDISS ), based on the nonlinear resonance between a known inductor and the output capaci ...

2019

Detection of ultra-low protein concentrations with the simplest possible field effect transistor

Mihai Adrian Ionescu, Elizabeth Buitrago Godinez

Silicon nanowire (Si NW) sensors have attracted great attention due to their ability to provide fast, low-cost, label-free, real-time detection of chemical and biological species. Usually configured as field effect transistors (FETs), they have already dem ...

IOP PUBLISHING LTD2019

On the Dynamic Performance of Laterally Gated Transistors

Elison de Nazareth Matioli, Armin Jafari, Catherine Erine, Giovanni Santoruvo

Laterally gated transistors have been proposed as an innovative device architecture in which a semiconducting channel is controlled by side gates. In this sense, the gate can either be in contact with the sidewalls or be separated by a gap. In the latter c ...

2019

Angle-multiplexed all-dielectric metasurfaces for broadband molecular fingerprint retrieval

Hatice Altug, Andreas Tittl, Aleksandrs Leitis, Bang Hyun Lee, Mingkai Liu

Infrared spectroscopy resolves the structure of molecules by detecting their characteristic vibrational fingerprints. Subwavelength light confinement and nanophotonic enhancement have extended the scope of this technique for monolayer studies. However, cur ...

2019

Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors

Giovanni De Micheli, Giovanni Vincenzo Resta, Pierre-Emmanuel Julien Marc Gaillardon

Amongst 2-dimensional (2D) semiconductors of the transition-metal di-chalcogenide (TMDC) family [1], tungsten diselenide (WSe2) has shown ambipolar behavior [2], [3] coupled with high carrier mobility [4] and CMOS-like devices have been experimentally demo ...

IEEE2018

The Cryogenic Temperature Behavior of Bipolar, MOS, and DTMOS Transistors in Standard CMOS

Edoardo Charbon, Harald Arjan Robert Homulle, Fabio Sebastiano

Both CMOS bandgap voltage references and temperature sensors rely on the temperature behavior of either CMOS substrate BJTs or MOS transistors in weak inversion. Bipolar transistors are generally preferred over MOS transistors because of their lower spread ...

2018

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Point-contact transistor

2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope

Output Capacitance Losses in Wide-Band-Gap Transistors: A Small-Signal Modeling Approach

Degradation Mechanism and Stability Improvement of Dopant-Free ZnO/LiFx/Al Electron Nanocontacts in Silicon Heterojunction Solar Cells

Measurement of Large-Signal Coss and Coss Losses of Transistors Based on Nonlinear Resonance

Exploration of Negative Capacitance Devices and Technologies

Detection of ultra-low protein concentrations with the simplest possible field effect transistor

On the Dynamic Performance of Laterally Gated Transistors

Angle-multiplexed all-dielectric metasurfaces for broadband molecular fingerprint retrieval

Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors

The Cryogenic Temperature Behavior of Bipolar, MOS, and DTMOS Transistors in Standard CMOS

Graph Chatbot

Chattez avec Graph Search

Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors

Detection of ultra-low protein concentrations with the simplest possible field effect transistor

Measurement of Large-Signal Coss and Coss Losses of Transistors Based on Nonlinear Resonance

Output Capacitance Losses in Wide-Band-Gap Transistors: A Small-Signal Modeling Approach

Angle-multiplexed all-dielectric metasurfaces for broadband molecular fingerprint retrieval

Exploration of Negative Capacitance Devices and Technologies

The Cryogenic Temperature Behavior of Bipolar, MOS, and DTMOS Transistors in Standard CMOS

2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope

Degradation Mechanism and Stability Improvement of Dopant-Free ZnO/LiFx/Al Electron Nanocontacts in Silicon Heterojunction Solar Cells

On the Dynamic Performance of Laterally Gated Transistors