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Publications associées (6)
Convergent beam electron diffraction of multilayer Van der Waals structures
Convergent beam electron diffraction is routinely applied for studying deformation and local strain in thick crystals by matching the crystal structure to the observed intensity distributions. Recently, it has been demonstrated that CBED can be applied for ...
2020Identifying champion nanostructures for solar water-splitting
Michael Graetzel, Francesco Stellacci, Cécile Hébert, Kislon Voitchovsky, Maurin Cornuz, Scott Charles Warren
Charge transport in nanoparticle-based materials underlies many emerging energy-conversion technologies, yet assessing the impact of nanometre-scale structure on charge transport across micrometre-scale distances remains a challenge. Here we develop an app ...
Nature Publishing Group2013Kinetics of antimicrobial peptide activity measured on individual bacterial cells using high-speed atomic force microscopy
Observations of real-time changes in living cells have contributed much to the field of cellular biology. The ability to image whole, living cells with nanometre resolution on a timescale that is relevant to dynamic cellular processes has so far been elusi ...
2010Metal Clusters on Surfaces
The morphology, stability and reactivity of nanometre-sized particles (Au, Pt) is investigated on three different supports. Gold nanoparticles with a diameter comprised between 4 and 6nm are stabilized in nanosized pits of well defined depth in highly orie ...
EPFL2010Hydrogen related bonding structure in hydrogenated polymorphous and microcrystalline silicon
We investigate the hydrogen related bonding structure in hydrogenated polymorphous silicon films (pm-Si:H) and hydrogenated microcrystalline silicon. Infra-red spectra reveal some new features for both kinds of films. namely new modes appearing in the stre ...
2002Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space-charge-limited current measurements
The density of states at the Fermi level N(E-F) has been measured on hydrogenated polymorphous (pm-Si:H) silicon samples using both capacitance measurements on Schottky barriers and space-charge-limited current measurements on n(+)/i/n(+) structures. From ...
1999