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Loi de Moore

Publications associées (256)

Enhancement of mechanical Q for low phase noise optomechanical oscillators

A self-sustained Radiation-Pressure driven MEMS ring OptoMechanical Oscillator (RP-OMO) attaining an anchor-loss-limited mechanical Q-factor of 10,400 in vacuum has posted a best-to-date phase noise of -102 dBc/Hz at a 1 kHz offset from a 74 MHz carrier, m ...

IEEE2013

Process/Design Co-optimization of Regular Logic Tiles for Double-Gate Silicon Nanowire Transistors

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Pierre-Emmanuel Julien Marc Gaillardon, Jian Zhang, Shashi Kanth Bobba, Michele De Marchi

Ambipolar transistors with on-line configurability to n-type and p-type polarity are desirable for future integrated circuits. Regular logic tiles have been recognized as an efficient layout fabric for ambipolar devices. In this work, we present a process/ ...

2012

TCAD Simulation of SOI TFETs and Calibration of Non-local Band-to-Band Tunneling Model

Mihai Adrian Ionescu, Wladyslaw Grabinski, Arnab Biswas, Surya Shankar Dan

This paper reports a simulation based study of the non-local tunneling model using a commercially available technology computer-aided design (TCAD) device simulator. Single gate Tunnel FET devices with 400nm gate length based on SOI technology are measured ...

Elsevier2012

Physical Synthesis onto Sea-of-Tiles with Double-Gate Silicon Nanowire Transistors

Giovanni De Micheli, Yusuf Leblebici, Shashi Kanth Bobba, Michele De Marchi

We have designed and fabricated double-gate ambipolar field-effect transistors, which exhibit p-type and n-type characteristics by controlling the polarity of the second gate. In this work, we present an approach for designing an efficient regular layout, ...

Ieee2012

Beyond Scaling

Luca De Michielis

Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...

EPFL2012

Vertically stacked Si nanostructures for biosensing applications

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Elizabeth Buitrago Godinez

High density (7-10 NW/μm) SiNW arrays of up to 16 nanowires vertically stacked with diameter widths below 20 nm have been successfully fabricated to create highly sensitive 3D FETs for biosensing applications. In order to take advantage of the increased se ...

Elsevier2012

Towards Cost Effective Multi-Core Processor Platforms Using 3-D Stacking Technology

Yusuf Leblebici, Alessandro Cevrero, Giulia Beanato, Panagiotis Athanasopoulos

A novel modular, cost e ffective 3D multi-processor architecture is presented. Auto-configurable and independently testable identical dies are stacked exploiting Through-Silicon-Vias (TSV) technology, allowing to target different market segments by selecti ...

2012

Multi-gate Si nanowire MOSFETs

Mohammad Najmzadeh

Multi-gate devices e.g. gate-all-around (GAA) Si nanowires and FinFETs are promising can- didates for aggressive CMOS downscaling. Optimum subthreshold slope, immunity against short channel effect and optimized power consumption are the major benefits of s ...

EPFL2012

A Novel Extraction Method and Compact Model for the Steepness Estimation of FDSOI TFET Lateral Junction

Mihai Adrian Ionescu, Wladyslaw Grabinski, Arnab Biswas, Surya Shankar Dan

There are several techniques for junction profiling available in literature, yet none of them are practically suitable for the accurate determination of the lateral junction steepness in TFET devices, which is the most important parameter influencing TFET ...

Institute of Electrical and Electronics Engineers2012

A Pragmatic Approach for Predicting the Scalability of Parallel Applications

Rachid Guerraoui, Aleksandar Dragojevic

Predicting the scalability of parallel applications is becoming crucial now that the number of cores in modern CPUs doubles roughly every two years. Traditional ways to get some understanding of the scalability of a parallel application rely on extensive e ...

EPFL2012

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