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In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise m ...
In this paper, a digital pixel sensor in silicon on insulator (SOI) is presented. The active part is a partially depleted SOI phototransistor. The technique elaborated in Harik et al. (2008) [1] was designed and implemented. Moreover, we took advantage of ...
Fast optical circuit switches (OCSs) with high port count offer reconfigurable bandwidth in optical networks and have the potential to significantly increase the performance and efficiency of modern datacenters. In this paper, we report on a new type of in ...
Silicon on Insulator (SOI) is an interesting alternative to bulk silicon for the fabrication of integrated circuits due to its advantages with respect to the junction leakage, low switching noise coupling, high temperature immunity, low voltage and low pow ...
Nowadays many consumer electronic devices are using small engines (micromotors). Thanks to technological innovation, the components can be imbedded into numerous portable systems. The key factors for a nomadic integration are: reduction of power consumptio ...
Large-scale photonic switches are essential devices for energy-and cost-efficient optical communication networks in cloud and data-intensive computing. Silicon photonics is an attractive platform for high-density photonic integrated circuits with low manuf ...
We present the design considerations of an autonomous wireless sensor and discuss the fabrication and testing of the various components including the energy harvester, the active sensing devices and the power management and sensor interface circuits. A com ...
Standard techniques used for measuring the photocurrent of an SOI phototransistor have failed due to two main reasons: the first being the low signal-to-noise ratio and the second being the slow transient. In this paper, the partially depleted silicon on i ...
Institute of Electrical and Electronics Engineers2009