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The oxygen transmission rate of 48 nm thick SiO2 coatings on a poly(ethylene terephthalate) (PET) substrate was reduced by a factor of three after applying an 8 nm thick layer of oligomerized gammaaminopropyltriethoxysilane (γ-APS). Increasing the thicknes ...
We investigated the application of two technologies for the fabrication of rectangular microchannels with reasonable path lengths for UV detection in UV transparent materials. The first approach uses inductively coupled plasma (ICP)-reactive ion etching (R ...
Focused Electron Beam Induced Deposition (FEBID) is a rapid prototyping technique for the investigation, production and modification of 2 and 3-D nanostructures. The process takes place at room temperature, in the high-vacuum chamber of a Scanning Electron ...
Piezoelectric micromachined ultrasonic transducers for airborne and immersed applications working in the frequency range from 20 kHz in liquid to 750 kHz in air have been fabricated and characterized, as well as simulated by finite element modelling. The b ...
We report on a study of pentacene thin-films grown by high vacuum deposition on silicon dioxide, using atomic force microscopy (AFM) and transmission electron microscopy (TEM). The nucleation density of pentacene islands on SiO2is found to rise ...
Silicon dioxide (SiO2) films grown on silicon monocrystal (Si) substrates form the gate oxides in current Si-based microelectronics devices. The understanding at the atomic scale of both the silicon oxidation process and the properties of the Si(100)-SiO2 ...
With a view toward laser isotope separation of Si, we have studied infrared multiphoton dissociation (IRMPD) of room temperature trichlorosilane, SiHCl3. Over the wavelength range investigated, multiphoton dissociation of the room temperature species exhib ...
The reaction of [(dropSiO)Zr(CH(2)tBu)(3)] with H-2 at 150 degreesC leads to the hydrogenolysis of the zirconium-carbon bonds to form a very reactive hydride intermediate(s), which further reacts with the surrounding siloxane ligands present at the surface ...
After assessing the current status concerning the interpretation of Si 2p core-level shifts in Si-O systems, we model the atomic structure of the Si(001)-SiO2 interface using recent photoemission data obtained with synchrotron radiation. Our model structur ...
Using surface micromachining technology, we fabricated nanofluidic devices with channels down to 10̂nm deep, 200̂nm wide and up to 8̂cm long. We demonstrated that different materials, such as silicon nitride, polysilicon and silicon dioxide, combined with ...
