Publications associées à Résistance-transistor

A 2.4-GHz low power polar transmitter for wireless body area network applications

Christian Enz, Vladimir Kopta, Franz Xaver Pengg

A 2.4 GHz low power polar transmitter is proposed in this paper. A dynamic biasing circuit, controlled by a digital envelope signal, is used as a direct digital-to-RF envelope converter. It effectively linearizes the input-output characteristic of the over ...

Springer Verlag2014

Majority Logic Representation and Satisfiability

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù

Majority logic is a powerful generalization of common AND/OR logic. Original two-level and multi-level logic networks can use majority operators as primitive connective, in place of AND/ORs. In such a way, Boolean functions have novel means for compact rep ...

2014

Submicrometer Organic Thin-Film Transistors: Technology Assessment Through Noise Margin Analysis of Inverters

Christian Enz, Jean-Michel Sallese, Rolando Ferrini, Franz Xaver Pengg, Nenad Marjanovic, Frédéric Zanella

In this paper, we propose a methodology to evaluate the potential of submicrometer organic thin-film transistors (OTFTs) with nanoimprinted gate and self-aligned source and drain contacts. In the first step, the dedicated static model we previously reporte ...

Institute of Electrical and Electronics Engineers2014

MoS2 Transistors Operating at Gigahertz Frequencies

Andras Kis, Yusuf Leblebici, Clemens Benedict Nyffeler, Dominik Sebastian Lembke, Daria Krasnozhon

The presence of a direct band gap1-4 and an ultrathin form factor5 has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulfide (MoS2) being the most studied repr ...

Amer Chemical Soc2014

FinFET integrated low-power circuits for enhanced sensing applications

Mihai Adrian Ionescu, Antonios Bazigos, Alexandru Rusu, Sara Rigante, Paolo Livi

This work presents different circuit architectures that combine sensing and signal readout functions. The basic building block is a Fin Field-Effect Transistor (Fin-FET) used as both sensor and metal gate transistor. Moreover, a hybrid partially gated FinF ...

Elsevier2013

Gate-all-around buckled dual Si nanowire nMOSFETs on bulk Si for transport enhancement and digital logic

Mihai Adrian Ionescu, Didier Bouvet, Mohammad Najmzadeh

In this paper, we report formation of GAA buckled dual Si nanowire MOSFETs including two sub-80 nm Si cores on bulk Si using 0.8 mu m optical lithography and local oxidation for the first time. 0.833 GPa uniaxial tensile stress is measured in the buckled s ...

Elsevier Science Bv2013

Contact properties of high-mobility, air-stable, low-voltage organic n-channel thin-film transistors based on a naphthalene tetracarboxylic diimide

Klaus Kern, Hagen Klauk

Air-stable bottom-gate, top-contact n-channel organic transistors based on a naphthalene diimide exhibiting electron mobilities up to 0.8 cm(2)/Vs at low voltages were fabricated. Transistors with channel lengths of 1 mu m show a transconductance of 60 mS/ ...

Amer Inst Physics2013

Convex combination initialization method for kohonen neural network implemented in the CMOS technology

Pierre-André Farine, Rafal Tomasz Dlugosz

The paper presents a new CMOS implementation of the initialization mechanism for Kohonen self-organizing neural networks. A proper selection of initial values of the weights of the neurons exhibits a significant impact on the quality of the learning proces ...

2012

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Résistance-transistor

A 2.4-GHz low power polar transmitter for wireless body area network applications

Majority Logic Representation and Satisfiability

Submicrometer Organic Thin-Film Transistors: Technology Assessment Through Noise Margin Analysis of Inverters

MoS2 Transistors Operating at Gigahertz Frequencies

Mono- and Bilayer WS2 Light-Emitting Transistors

Another transistor-based revolution: on-chip qPCR

FinFET integrated low-power circuits for enhanced sensing applications

Gate-all-around buckled dual Si nanowire nMOSFETs on bulk Si for transport enhancement and digital logic

Contact properties of high-mobility, air-stable, low-voltage organic n-channel thin-film transistors based on a naphthalene tetracarboxylic diimide

Convex combination initialization method for kohonen neural network implemented in the CMOS technology

Graph Chatbot

Chattez avec Graph Search

Majority Logic Representation and Satisfiability

A 2.4-GHz low power polar transmitter for wireless body area network applications

Submicrometer Organic Thin-Film Transistors: Technology Assessment Through Noise Margin Analysis of Inverters

MoS2 Transistors Operating at Gigahertz Frequencies

Mono- and Bilayer WS2 Light-Emitting Transistors

Another transistor-based revolution: on-chip qPCR

FinFET integrated low-power circuits for enhanced sensing applications

Gate-all-around buckled dual Si nanowire nMOSFETs on bulk Si for transport enhancement and digital logic

Contact properties of high-mobility, air-stable, low-voltage organic n-channel thin-film transistors based on a naphthalene tetracarboxylic diimide

Convex combination initialization method for kohonen neural network implemented in the CMOS technology