Physical Review | EPFL Graph Search

Physical Review représente un ensemble de journaux scientifiques de haut niveau édité par l'American Physical Society. Histoire Le premier numéro de Physical Review est paru en . Au cours de son histoire, le journal a changé de nom :

Physical Review Series I, 35 volumes, 1893-1912
Physical Review Series II, 188 volumes, 1913-1969

À partir de 1970, le journal a été scindé en différents journaux :

Physical Review A est consacré à l'optique physique, la physique atomique et moléculaire, et l'information quantique, 1970-en cours
Physical Review B est consacré à la physique de la matière condensée, 1970-en cours
Physical Review C est consacré à la physique nucléaire, 1970-en cours
Physical Review D est consacré à la physique des particules, la théorie des champs, la gravitation et la cosmologie, 1970-en cours
Physical Review E est consacré à la physique statistique et la physique de la matière molle, 1993-en cours

Chacun de ces journa

Charge transport mechanisms in organic and microcrystalline silicon field-effect transistors

Marie-Noëlle Bussac, Steven Konezny, Libero Zuppiroli

Several organic and inorganic materials have emerged as promising candidates for the active layer of field-effect transistors (FETs) fabricated on flexible substrates. The charge transport models necessary for device optimization in these systems are at different stages of development. The understanding of charge transport in single-crystal and thin-film FETs based on organic materials such as pentacene, rubrene, and other related compounds has advanced considerably in recent years and a clear picture of the relevant transport mechanisms is forming. In contrast, the theoretical description of transport in hydrogenated microcrystalline silicon (µc-Si:H) is not as well known and the published results and theories are often contradictory. We review the paradigms we feel are useful in describing the current understanding of transport in organic and µc-Si:H field-effect transistors. In the case of organic materials these include the polarization and transfer integral fluctuation model [A. Troisi and G. Orlandi, Phys. Rev. Lett. 96, 086601 (2006), J.-D. Picon et al., Phys. Rev. B 75, 235106 (2007)], the Frlich polaron model [I.N. Hulea et al., Nat. Mater. 5, 982 (2006), H. Houilli et al., J. Appl. Phys. 100, 033702 (2006)], and several trapping models [M.E. Gershenson et al., Rev. Mod. Phys. 78, 973 (2006), V. Podzorov et al., Phys Rev. Lett. 95, 226601 (2005)]. Given the heterogeneous composition and structure of microcrystalline silicon thin films, a variety of theories to describe dark conductivity have been applied to µc-Si:H including those based on percolation theory [H. Overhof et al., J. Non-Cryst. Solids 227-230, 992 (1998)], hopping models [A. Dussan and R. H. Buitrago, J. Appl. Phys. 97, 043711 (2005)], thermionic emission, and tunneling. We give a brief overview of these models and present a fluctuation-induced tunneling model that we are developing to describe charge transport in microcrystalline silicon.

International Society for Optical Engineering, Bellingham WA, WA 98227-0010, United States2007

Charge transport mechanisms in organic and microcrystalline silicon field-effect transistors

Marie-Noëlle Bussac, Steven Konezny, Libero Zuppiroli

Several organic and inorganic materials have emerged as promising candidates for the active layer of field-effect transistors (FETs) fabricated on flexible substrates. The charge transport models necessary for device optimization in these systems are at different stages of development. The understanding of charge transport in single-crystal and thin-film FETs based on organic materials such as pentacene, rubrene, and other related compounds has advanced considerably in recent years and a clear picture of the relevant transport mechanisms is forming. In contrast, the theoretical description of transport in hydrogenated microcrystalline silicon (mu c-Si:H) is not as well known and the published results and theories are often contradictory. We review the paradigms we feel are useful in describing the cur-rent understanding of transport in organic and mu c-Si:H field-effect transistors. In the case of organic materials these include the polarization and transfer integral fluctuation model [A. Troisi and G. Orlandi, Phys. Rev. Lett. 96, 086601 (2006), J.-D. Picon et al., Phys. Rev. B 75, 235106 (2007)], the Frolich polaron model [I.N. Hulea el al., Nat. Mater. 5, 982 (2006), H. Houilli et al., J. Appl. Phys. 100, 033702 (2006)], and several trapping models [M.E. Gershenson et al., Rev. Mod. Phys. 78, 973 (2006), V. Podzorov et al., Phys Rev. Lett. 95, 226601 (2005)]. Given the heterogeneous composition and structure of microcrystalline silicon thin films, a variety of theories to describe dark conductivity have been applied to mu c-Si:H including those based on percolation theory [H. Overhof et al., J. Non-Cryst. Solids 227-230, 992 (1998)], hopping models [A. Dussan and R. H. Buitrago, J. Appl. Phys. 97, 043711 (2005)], thermionic emission, and tunneling. We give a brief overview of these models and present a fluctuation-induced tunneling model that we are developing to describe charge transport in microcrystalline silicon.

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2007

Acoustic Topological Fano Resonances

Romain Christophe Rémy Fleury, Farzad Zangeneh Nejad

Originally discovered in the context of quantum mechanics in 1961, the ultra-sharp spectrum of the Fano resonance has nowadays established itself as centerpiece in modern engineering for realizing a large variety of prominent devices including low energy switches [1], efficient sources and emitters [2], and highly sensitive interferometers [3]. In addition, the peculiar asymmetric line shape of the Fano resonance is found to be substantially sensitive to environmental changes, establishing a unique platform for the implementation of highly sensitive sensors and actuators [4]. The excessive sensitivity of the Fano resonance to environmental and structural parameters is, however, not always desirable as it makes the practical implementation of Fano structures extremely challenging, mitigating the performance advantages obtained from Fano interference by costs related to the fabrication technology. Here, we report our recent theoretical findings and experimental observations of acoustic topological Fano resonances whose much-sought line-shapes is guaranteed by topology, offering a unique protection against geometrical tolerances. We construct such topological Fano resonances from interaction between a bright and a dark mode that both have topological origin, and demonstrate this concept experimentally for audible airborne sound in a one-dimensional acoustic scenario. By going beyond the performance degradation caused by inadvertent fabrication flaws, such protection paves the way for a new generation of Fano-based acoustic devices which, not only possess exotic properties as any other Fano structure, but also can be readily implemented in practice with very low cost [5]. 1. K. Nozaki, et al. Optics express 21.10 (2013): 11877-11888. 2. S. Chua, et al. Optics express 19.2 (2011): 1539-1562. 3. K. Heeg, et al. Physical review letters 114.20 (2015): 207401. 4. C. Wu, et al. Nature materials 11.1 (2012): 69. 5. F. Zangeneh-Nejad, and R. Fleury, Physical review letters. 122 (2019): 014301

2019

Acoustic Topological Fano Resonances

Romain Christophe Rémy Fleury, Farzad Zangeneh Nejad

2019

Charge transport mechanisms in organic and microcrystalline silicon field-effect transistors

Marie-Noëlle Bussac, Steven Konezny, Libero Zuppiroli

International Society for Optical Engineering, Bellingham WA, WA 98227-0010, United States2007

Charge transport mechanisms in organic and microcrystalline silicon field-effect transistors

Marie-Noëlle Bussac, Steven Konezny, Libero Zuppiroli

Several organic and inorganic materials have emerged as promising candidates for the active layer of field-effect transistors (FETs) fabricated on flexible substrates. The charge transport models necessary for device optimization in these systems are at different stages of development. The understanding of charge transport in single-crystal and thin-film FETs based on organic materials such as pentacene, rubrene, and other related compounds has advanced considerably in recent years and a clear picture of the relevant transport mechanisms is forming. In contrast, the theoretical description of transport in hydrogenated microcrystalline silicon (mu c-Si:H) is not as well known and the published results and theories are often contradictory. We review the paradigms we feel are useful in describing the cur-rent understanding of transport in organic and mu c-Si:H field-effect transistors. In the case of organic materials these include the polarization and transfer integral fluctuation model [A. Troisi and G. Orlandi, Phys. Rev. Lett. 96, 086601 (2006), J.-D. Picon et al., Phys. Rev. B 75, 235106 (2007)], the Frolich polaron model [I.N. Hulea el al., Nat. Mater. 5, 982 (2006), H. Houilli et al., J. Appl. Phys. 100, 033702 (2006)], and several trapping models [M.E. Gershenson et al., Rev. Mod. Phys. 78, 973 (2006), V. Podzorov et al., Phys Rev. Lett. 95, 226601 (2005)]. Given the heterogeneous composition and structure of microcrystalline silicon thin films, a variety of theories to describe dark conductivity have been applied to mu c-Si:H including those based on percolation theory [H. Overhof et al., J. Non-Cryst. Solids 227-230, 992 (1998)], hopping models [A. Dussan and R. H. Buitrago, J. Appl. Phys. 97, 043711 (2005)], thermionic emission, and tunneling. We give a brief overview of these models and present a fluctuation-induced tunneling model that we are developing to describe charge transport in microcrystalline silicon.

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2007