Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
The weak beam technique is now used widely for the determination of stacking fault energies, in particular for intermetallic alloys, and the accuracy of the approach is critically dependent upon the reliability of the relationship between the image and the ...
In situ cathodoluminescence experiments have been performed to follow the time dependence of the UV luminescence in epitaxial lateral overgrowth GaN specimens. The decrease of the observed intensity and red-shift of the UV peak are interpreted in terms of ...
The Zn/Se flux ratio employed during the early stages of molecular beam epitaxy of pseudomorphic ZnSe/GaAs(001) as well as lattice-matched ZnSe/In0.04Ga0.96As(001) heterostructures controls the density of the native stacking faults, which have been associa ...
The properties of ZnSe epilayers fabricated by molecular beam epitaxy on lattice-matched InxGa1-xAs buffers grown on GaAs(001) substrates have been investigated by means of photoluminescence spectroscopy and transmission electron microscopy. For suitable v ...
The microstructure of the low activation F82H ferritic/martensitic steel has been investigated in the cases of the heat treated, irradiated and deformed material. The irradiation has been achieved with 590 MeV protons in the Proton IRradiation EXperiment ( ...
We describe the first stage of the evolution of CL spectra, intensity and dislocation contrast under low keV electron beam for ELO-GaN with a low dislocation density. The UV and yellow intensities are decreased by beam irradiation. We have observed a broad ...
We have investigated by TEM InAlAs/InGa1-xAs/InP heterostructures grown by Molecular Beam Epitaxy. Our interest has been focused on the effects of the growth temperature tin the range T-g=470 degrees C-->530 degrees C), well composition (x(In)=53%-->80%) a ...
A high density of small defect clusters, similar to those observed in irradiated or quenched metals. has been observed in the deformed f.c.c. metals Cu, Au and Ni. The preliminary results show that the defect clusters are predominantly stacking fault tetra ...
The introduction of new packages as well as the ongoing miniaturization in SMT make the evaluation of the reliability of solder joints a permanent task. Passive thermal cycling is an important test to evaluate the lifetime of solder joints. However, tin-le ...
The dislocation structures resulting from compression tests on Ni-3 (Al, I-If) single crystals are studied as a function of the deformation temperature between 77 and 900 K. Mechanical parameters are also reported, such as the 0.2% offset stress, the work- ...
