Publications associées à Les Sims 2

MIXING FOR GENERIC ROUGH SHEAR FLOWS

We study mixing and diffusion properties of passive scalars driven by generic rough shear flows. Genericity is here understood in the sense of prevalence, and (ir)regularity is measured in the Besov-Nikolskii scale B\alpha 1,\infty, \alpha \in (0,1). We pr ...

Siam Publications2023

CORE SIM+ simulations of COLIBRI fuel rods oscillation experiments and comparison with measurements

Andreas Pautz, Vincent Pierre Lamirand, Mathieu Hursin, Carlo Fiorina, Oskari Ville Pakari, Pavel Frajtag, Axel Guy Marie Laureau, Adolfo Rais, Daniel Godat, Paolo Vinai

At EPFL, the CROCUS reactor has been used to carry out experiments with vibrating fuel rods. The paper presents a first attempt to employ the measured data to validate CORE SIM+, a neutron noise solver developed at Chalmers University of Technology. For th ...

2021

A method for quantitative nanoscale imaging of dopant distributions using secondary ion mass spectrometry: an application example in silicon photovoltaics

Franz-Josef Haug, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Andrea Ingenito, Gizem Nogay, Mario Joe Lehmann

A method for rapid quantitative imaging of dopant distribution using secondary ion mass spectrometry (SIMS) is described. The method is based on SIMS imaging of the cross-section of a reference sample with a known concentration profile. It is demonstrated ...

2019

SIMToolbox: a MATLAB toolbox for structured illumination fluorescence microscopy

Tomas Lukes

SIMToolbox is an open-source, modular set of functions for MATLAB equipped with a user-friendly graphical interface and designed for processing two-dimensional and three-dimensional data acquired by structured illumination microscopy (SIM). Both optical se ...

Oxford University Press2016

Role of stable and metastable Mg-H complexes in p-type GaN for cw blue laser diodes

Nicolas Grandjean, Jean-François Carlin, Antonino Francesco Castiglia

Secondary ion mass spectroscopy (SIMS) and capacitance-voltage measurements were combined to thoroughly study Mg doping in GaN layers grown by metal organic vapor phase epitaxy. First we found that the Mg steady-state incorporation regime occurs for a surf ...

AIP American Institute of Physics2011

Microcrystalline silicon solar cells: effect of substrate temperature on cracks and their role in post-oxidation

Christophe Ballif, Thomas Söderström, Martin Python

Microcrystalline silicon (mc-Si:H) cells can reach efficiencies up to typically 10% and are usually incorporated in tandem micromorph devices. When cells are grown on rough substrates, ‘‘cracks’’ can appear in the mc-Si:H layers. Previous works have demons ...

2010