Publications associées à Channelling (physics)

Persistence of variant selection in red gold alloys

Roland Logé, Cyril Cayron, Margaux Nathalie Dominique Larcher

Recently, a new thermally activated distortion with amplification (TADA) effect has been reported in red gold alloys caused by the A1 -> L1(0) phase transformation. The macroscopic amplification is due to the persistence of variant selection nucleated unde ...

ELSEVIER SCIENCE SA2022

Molecular dynamics simulations of irradiation of alpha-Fe thin films with energetic Fe ions under channeling conditions

Anna Prokhodtseva

Using molecular dynamics simulations with recent interatomic potentials developed for Fe, we have studied the defects in thin films of pure bcc Fe induced by the displacement cascade produced by Fe atoms of 50, 100, and 150 keV impinging under a channeling ...

Elsevier Science Bv2014

Effect of ion-irradiation on the microstructure and microhardness of the W-2Y(2)O(3) composite materials fabricated by sintering and hot forging

Philippe Spätig, Nadine Baluc

A W-2Y(2)O(3) material was developed in collaboration with the Plansee Company (Austria). An ingot of the material having approximate dimension of 95 mm x 20 mm was fabricated by mixing the elemental powders followed by pressing, sintering and hot forging. ...

Elsevier Science Sa2013

Early stages of radiation damage in graphite and carbon nanostructures: A first-principles molecular dynamics study

Ursula Röthlisberger, Lothar Helm, Oleg Yazyev, Ivano Tavernelli

Understanding radiation-induced defect formation in carbon materials is crucial for nuclear technology and for the manufacturing of nanostructures with desired properties. Using first-principles molecular dynamics, we perform a systematic study of the none ...

2007

Photoluminescence characterization of few-nanocrystals electronic devices

Jürgen Brugger, Marc Antonius Friedrich van den Boogaart

Photoluminescence (PL) spectroscopy is demonstrated as a suitable technique to characterize silicon nanocrystals (Si-NCs)-based nonvolatile memory devices. The 2D array of Si-NCs forming the floating gate is obtained by low-energy ion implantation in thin ...

2006

Photoluminescence characterization of localized 2D-layers of few-nanocrystals electronic devices

Marc Antonius Friedrich van den Boogaart

Photoluminescence (PL) spectroscopy has been demonstrated as a suitable technique to characterize Si nanocrystal-based non-volatile memory devices (Carrada et al. APL 2005). These are formed by a single plane of Si nanocrystals (NCs) buried in the gate oxi ...

2006

Silicon crystal distortions at the Si(100)-SiO2 interface from analysis of ion-scattering

Alfredo Pasquarello, Angelo Bongiorno

The structure of the Si(100)-SiO2 interface is investigated at the atomic scale by combining Rutherford ion scattering measurements and theoretical modeling. Ion-scattering experiments are performed in the channeling geometry using ion energies between 0.4 ...

2004

Transition structure at the Si(100)-SiO2 interface

Alfredo Pasquarello, Angelo Bongiorno

We characterize the transition structure at the Si(100)-SiO2 interface by addressing the inverse ion-scattering problem. We achieve sensitivity to Si displacements at the interface by carrying out ion-scattering measurements in the channeling geometry for ...

2003

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Channelling (physics)

Persistence of variant selection in red gold alloys

Molecular dynamics simulations of irradiation of alpha-Fe thin films with energetic Fe ions under channeling conditions

Effect of ion-irradiation on the microstructure and microhardness of the W-2Y(2)O(3) composite materials fabricated by sintering and hot forging

Early stages of radiation damage in graphite and carbon nanostructures: A first-principles molecular dynamics study

Photoluminescence characterization of few-nanocrystals electronic devices

Photoluminescence characterization of localized 2D-layers of few-nanocrystals electronic devices

Ion implantation in Ni-Ti shape memory alloy thin films

Silicon crystal distortions at the Si(100)-SiO2 interface from analysis of ion-scattering

Transition structure at the Si(100)-SiO2 interface

Molecular-dynamics study of collision, implantation, and fragmentation of Ag7 on Pd(100)

Graph Chatbot

Chattez avec Graph Search

Molecular dynamics simulations of irradiation of alpha-Fe thin films with energetic Fe ions under channeling conditions

Persistence of variant selection in red gold alloys

Effect of ion-irradiation on the microstructure and microhardness of the W-2Y(2)O(3) composite materials fabricated by sintering and hot forging

Early stages of radiation damage in graphite and carbon nanostructures: A first-principles molecular dynamics study

Photoluminescence characterization of few-nanocrystals electronic devices

Photoluminescence characterization of localized 2D-layers of few-nanocrystals electronic devices

Molecular-dynamics study of collision, implantation, and fragmentation of Ag7 on Pd(100)

Ion implantation in Ni-Ti shape memory alloy thin films

Silicon crystal distortions at the Si(100)-SiO2 interface from analysis of ion-scattering

Transition structure at the Si(100)-SiO2 interface