Publications associées à Silicon nanowire

Memristive Control of Plasmon-Mediated Nonlinear Photoluminescence in Au Nanowires

Nonlinear photoluminescence (N-PL) is a broadband photon emission arising from a nonequilibrium heated electron distribution generated at the surface of metallic nanostructures by ultrafast pulsed laser illumination. N-PL is sensitive to surface morphology ...

Amer Chemical Soc2024

Optimizing Atomic Layer Deposition Processes with Nanowire-Assisted TEM Analysis

Johann Michler, Ivo Utke, Xavier Maeder

Atomic layer deposition (ALD) is one of the premier methods to synthesize ultra-thin materials on complex surfaces. The technique allows for precise control of the thickness down to single atomic layers, while at the same time providing uniform coverage ev ...

Wiley2024

Nanomechanical Modeling of the Bending Response of Silicon Nanowires

Yusuf Leblebici, Zuhal Tasdemir, Mohammad Nasr Esfahani, Mustafa Yilmaz

Understanding the mechanical behavior of silicon nanowiresis essentialfor the implementation of advanced nanoscale devices. Although bendingtests are predominantly used for this purpose, their findings shouldbe properly interpreted through modeling. Variou ...

AMER CHEMICAL SOC2023

Semiconductor-based device architectures in multimaterial fibers

William Nicolas Duncan Esposito

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

EPFL2023

Effect of Native Oxide on Stress in Silicon Nanowires: Implications for Nanoelectromechanical Systems

Yusuf Leblebici, Zuhal Tasdemir, Mohammad Nasr Esfahani

Understanding the origins of intrinsic stress in Si nanowires (NWs) is crucial for their successful utilization as transducer building blocks in next-generation, miniaturized sensors based on nanoelectromechanical systems (NEMS). With their small size lead ...

AMER CHEMICAL SOC2022

Controlled filamentation instability as a scalable fabrication approach to flexible metamaterials

Fabien Sorin, Pierre-Luc Eloi Piveteau, William Nicolas Duncan Esposito, Louis Marie Philippe Martin-Monier

Long and flexible arrays of nanowires find impactful applications in sensing, photonics, and energy harvesting. Conventional manufacturing relies largely on lithographic methods limited in wafer size, rigidity, and machine write time. Here, we report a sca ...

Nature Portfolio2022

Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphide

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Mirjana Dimitrievska

Growth approaches that limit the interface area between layers to nanoscale regions are emerging as a promising pathway to limit the interface defect formation due to mismatching lattice parameters or thermal expansion coefficient. Interfacial defect mitig ...

AMER CHEMICAL SOC2022

Generation of Human iPSC-Derived Neurons on Nanowire Arrays Featuring Varying Lengths, Pitches, and Diameters

Anna Fontcuberta i Morral, Wonjong Kim

Nanowire (NW) arrays interfaced with biological cells have been demonstrated to be potent tools for advanced applications such as sensing, stimulation, or drug delivery. Many implementations, however, have so far only been studied with rather robust basic ...

WILEY2022

Controlling surface effects in extremely high aspect ratio gold plasmonic electrodes

Olivier Martin, Christian Santschi, Marco Riccardi

Nanofabrication is key to many technological advances, especially the challenge of merging nanophotonics with electronics. Here, we investigate the fabrication process of plasmonic interdigitated gold electrodes having a very high aspect ratio (i.e. long a ...

ELSEVIER2022

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Anna Fontcuberta i Morral, Lucas Güniat, Didem Dede, Valerio Piazza, Martin George Friedl, Elif Nur Dayi, Nicholas Paul Morgan, Akshay Balgarkashi, Vladimir Dubrovskii

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...

IOP Publishing Ltd2022