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Nanofil
Publications associées (878)
High-performance normally-off tri-gate GaN power MOSFETs
Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu
In this work, we present the investigation of the combination of gate recess and tri-gate structures to achieve high performance normally-off GaN-on-Si MOSFETs with high positive threshold voltage ( VTH ), low specific on resistance ( RON,SP ) and high out ...
IEEE2019Transverse cracking in the bulk and at the free edge of thin-ply composites: experiments and multiscale modelling
John Botsis, Robin Amacher, Joël Cugnoni, Sébastien Kohler
Thin-ply composites were shown to exhibit significantly delayed transverse cracking, but the linear onset of damage scaling with ply thickness reported by Amacher et al. (2014) did not correspond to the established LEFM based in situ strength model. This s ...
2019Doping of epitaxial graphene by direct incorporation of nickel adatoms
Virginia Carnevali, Gianluca Prandini
Direct incorporation of Ni adatoms during graphene growth on Ni( 111) is evidenced by scanning tunneling microscopy. The structure and energetics of the observed defects is thoroughly characterized at the atomic level on the basis of density functional the ...
ROYAL SOC CHEMISTRY2019Dibenzoquinquethiophene- and Dibenzosexithiophene-Based Hole-Transporting Materials for Perovskite Solar Cells
Mohammad Khaja Nazeeruddin, Iwan Zimmermann, Javier Urieta Mora
Fused oligothiophene-based pi-conjugated organic derivatives have been widely used in electronic devices. In particular, two-dimensional (2D) heteroarenes offer the possibility of broadening the scope by extending the pi-conjugated framework, which endows ...
2019Stable perovskite solar cells using tin acetylacetonate based electron transporting layers
Mohammad Khaja Nazeeruddin, Yi Zhang, Emad Oveisi, Hiroyuki Kanda, Robin Humphry-Baker, Sanghyun Paek, Yonghui Lee, Kyung Taek Cho, Aron Joel Huckaba, Hobeom Kim
Organic-inorganic lead halide perovskites with over 23% power conversion efficiency have attracted enormous academic and industrial attention due to their low-cost fabrication and high device performance. Self-passivated tin oxide as an electron transport ...
ROYAL SOC CHEMISTRY2019Bi-stability of contact angle and its role in tuning the morphology of self-assisted GaAs nanowires
Anna Fontcuberta i Morral, Lucas Güniat, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Jean-Baptiste Leran, Wonjong Kim, Luca Francaviglia, Vladimir Dubrovskii, Jelena Vukajlovic Plestina
We demonstrate the existence of two stable contact angles for the gallium droplet on top of self-assisted GaAs nanowires grown by MBE on patterned silicon substrates. Contact angle around 130 degrees fosters a continuous increase in the nanowire radius, wh ...
IEEE2018Uni-directional GaN-on-Si MOSHEMTs with High Reverse-Blocking Voltage based on Nanostructured Schottky Drain
Elison de Nazareth Matioli, Jun Ma
In this work we present uni-directional GaN-on-Si MOSHEMTs with state-of-the-art reverse-blocking performance. We integrated tri-anode Schottky barrier diodes (SBDs) with slanted tri-gate field plates (FPs) as the drain electrode, and achieved a high rever ...
IEEE2018