Absorption à deux photons | EPFL Graph Search

L'absorption à deux photons (ADP) est l'absorption simultanée de deux photons de fréquences identiques ou différentes dans le but d'exciter une molécule dans un état donné (habituellement, l'état fondamental) à un état électronique de plus haute énergie. La différence d'énergie entre ces deux états est égale à la somme des énergies des deux photons. L'absorption à deux photons est un processus de second ordre, de plusieurs degrés de magnitude plus faible que l'absorption linéaire. Elle diffère de l' parce qu'elle est proportionnelle au carré de l'intensité de la lumière, ce qui en fait un processus d'optique non linéaire. L'absorption à deux photons peut produire de la fluorescence excitée à deux photons. Histoire Ce phénomène est prévu par les travaux de Maria Goeppert-Mayer en 1931, dans sa thèse doctorale. Trente ans plus tard, l'invention des lasers permet la première vérification expérimentale de l'ADP lorsque la fluorescence excitée à deux photons est détectée dan

Integrated Gallium Phosphide Photonics

Katharina Schmeing

The integration of new materials mediating light-matter interaction in nanoscale devices is a persistent goal in nanophotonics. One of these materials is Gallium phosphide, which offers an attractive combination of a high refractive index (n=3.05 at a wavelength of 1550 nm) and a large bandgap (Eg =2.26 eV), enabling photonic devices with strongly confined light fields, not suffering from heating due to two-photon absorption at telecommunication wavelengths. Furthermore, due to its non-centrosymmetric crystal structure, it has a non-vanishing second-order susceptibility and is piezoelectric. Related to its large refractive index is a high third-order susceptibility. Prior to this work the use of GaP for photonic devices was limited to individual non-integrated components, as GaP was not available on a substrate with substantially lower refractive index equivalent to SOI-wafers for silicon. In this work a process was developed that allows the integration of GaP devices onto SiO2. It exploits direct wafer bonding of a GaP/AlxGa1-xP/GaP heterostructure onto a SiO2-on-Si wafer. After substrate removal, photonic devices are patterned by dry-etching in the top GaP device layer. The GaP devices investigated here are used to explore nonlinear optics and optomechanics. In the area of nonlinear optics, second- and third-harmonic generation are observed. The Kerr coefficient is experimentally estimated as n2[1550nm] = 1.2(5)x10^17m^2/W, for the first time in a precision measurement at telecommunication wavelengths. Four-wave mixing is used for broadband frequency comb generation, where a power threshold as low as 3 mW is obtained. The combination of four-wave mixing and second-harmonic generation leads to frequency-doubled combs. The optomechanical properties of GaP one-dimensional photonic crystal cavities are optimized by simulations and fabricated devices are characterized. Optical quality factors of Qo>10^5 and optomechanical coupling strengths of g0/2pi=400 kHz are measured. Dynamical backaction in the form of the spring effect and the parametric amplification are observed, as well as optomechanically induced transparency and absorption. A device design for a microwave-to-optical transducer is developed, relying on the piezoelectricity of GaP. It combines electromechanical and optomechanical transduction. The predicted electromechanical coupling strength is in the MHz range. Furthermore, photonic crystal cavity designs containing a slot at the center of the cavity are studied. According to simulations for slot widths below 30 nm, optomechanical coupling strengths g0/2pi>1 MHz could be achieved. Fabricated silicon photonic crystal cavities show high quality factors of Qo=8x10^4 while hosting a mechanical eigenmode with a frequency of 2.7 GHz. Because of process technology limitations, only slot widths as narrow as 40 nm can be fabricated, the achieved g0/2pi is limited to 300 kHz. The new GaP-on-insulator material platform opens the door to integrated GaP devices. Frequency combs are of interest for soliton comb formation, mid-IR frequency combs, and ultra-broadband supercontinuum generation. Microwave-to-optical transducers are on the one hand desired for quantum information processing, on the other hand they are applicable as efficient modulators or detectors for classical signals.

EPFL2019

Microwave-to-Optical Transduction with Gallium Phosphide Electro-Optomechanical Devices

Simon Benjamin Klaus Hönl

Quantum computing is one of the great scientific challenges of the 21st century. Small-scalesystems today promise to surpass classical computers in the coming years and to enable thesolution of classically intractable computational tasks in the fields of quantum chemistry,optimization, cryptography and more.In contrast to classical computers, quantum computers based on superconducting quantumbits (qubits) can to date not be linked over long distance in a network to improve their computingcapacity, since devices, which preserve the quantumstate when it is transferred from onemachine to another, are not available. Several approaches are being pursued to realize such acomponent, one of themost promising to date makes use of an intermediary, micromechanicalelement that enables quantum coherent conversion between the information presentin the quantum computer and an optical fiber, without compromising the quantum natureof the information, via optomechanical interaction. This approach could allow fiber-opticquantum networks between separate quantum computers based on superconducting qubitsin the future.In this work a platformfor such a microwave-to-optic link was developed based on the piezoelectricmaterial gallium phosphide. This III-V semiconductor offers not only a piezoelectriccoupling between the electric field of a microwave circuit and a mechanicalmode, but also awide optical bandgap E_g = 2.26eV which reduces nonlinear optical absorption in the deviceand a large refractive index n(1550nm) = 3.01 which allows strong optical confinement atnear-infrared wavelengths.Importantly and in contrast to other approaches with gallium phosphide, an epitaxiallygrown, single crystal thin film of the material is integrated directly on a silicon wafer withpre-structured niobium electrodes by direct wafer-bonding. This opens up the possibility ofintegrating the device design presented here directly with superconducting qubits fabricatedwith this material system.A microwave-to-optical transducer design was simulated and fabricated in the galliumphosphideon-silicon platform. The device was found to exhibit large vacuum optomechanical couplingrates g0/2 pi ~ 290kHz and a high intrinsic optical quality factor Q >10^5 while at the same timepermitting electromechanical coupling to a microwave electrode. Coherent microwave-toopticaltransductionwas shown at room temperature for this device and the electromechanicalcoupling rate could be extracted from a model derived by input-output theory.The electromechanical coupling between the electro-optomechanical device and a superconductingqubit was estimated to be g/2 pi = O(200kHz) which indicates that strong couplingbetween the here presented device and a superconducting transmon qubit is achievable.In addition, superconducting microwave cavities with high quality factor at single photonenergy Q ~ 5x10^5 were fabricated and measured to verify that fabrication process of themicrowave-to-optical transducer is compatible with high-quality superconducting microwavecircuits.

EPFL2021

Quadrupolar Benzobisthiazole-Cored Arylamines as Highly Efficient Two-Photon Absorbing Fluorophores

Vladislav Semak

A computer-aided design of novel D-pi-A-pi-D styrylamines containing five isomeric benzobisthiazole moieties as the electron-accepting core has revealed the linear centrosymmetric benzo[1,2-d:4,5-d']bisthiazole as the most promising building block for engineering chromophores displaying high two-photon absorption (TPA) in the near-IR region, as also confirmed experimentally. The ease of synthesis of quadrupolar derivatives thereof, combined with extraordinarly high TPA action cross sections (delta(TPA)Phi(f) > 1500 GM), makes these heteroaromatic systems particularly attractive as diagnostic agents in 3D fluorescence imaging.

Amer Chemical Soc2014