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Sc-doped aluminum nitride (AlScN) allows for piezoelectric devices with large electromechanical coupling and the benefits increase with larger Sc doping in the film. However, with a larger Sc concentration, the process window narrows, and it is necessary t ...
AbstractThe degradation of metal interconnects (ICs) in Solid Oxide Cells (SOCs) primarily results from chromium (Cr) oxide scale growth on stainless-steel substrates, causing ohmic loss and air-side electrode poisoning by Cr. This thesis addresses these c ...
The heat flux mitigation during the thermal quench (TQ) by the shattered pellet injection (SPI) is one of the major elements of disruption mitigation strategy for ITER. It's efficiency greatly depends on the SPI and the target plasma parameters, and is ult ...
Atomic layer deposition (ALD) is one of the premier methods to synthesize ultra-thin materials on complex surfaces. The technique allows for precise control of the thickness down to single atomic layers, while at the same time providing uniform coverage ev ...
Using scanning tunneling microscopy (STM), we experimentally and theoretically investigate isolated platinum phthalocyanine (PtPc) molecules adsorbed on an atomically thin NaCl(100) film vapor deposited on Au(111). We obtain good agreement between theory a ...
Ozone reaction with human surfaces is an important source of ultrafine particles indoors. However, 1-20 nm particles generated from ozone-human chemistry, which mark the first step of particle formation and growth, remain understudied. Ventilation and indo ...
In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...
It is highly uncertain how the humidity flux between the snow surface and the atmosphere contributes to the surface mass balance (SMB) of the interior Greenland Ice Sheet (GrIS). Due to sparse observations, evaluations of the simulated humidity flux are li ...
GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...
Continuous development of thin film deposition technologies is essential for the fabrication of films that meet the specific requirements of their target applications and working conditions. Therefore, it is necessary to increase the number of accessible a ...