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In this work, the influence of varying mixing ratios of O-2 on positive streamer initiation in supercritical (SC) CO2 at different applied voltages was investigated using a 3-D particle model. Zener's model was included in the 3-D particle model to calcula ...
The present invention concerns a biosensor (1) comprising: a source element (13); a drain element (17); a semiconductor channel element between the source element (13) and the drain element (17) for forming an electrically conductive channel with adjustabl ...
In this study, experiments were performed to measure the inception and breakdown voltages of SF6/CO2 mixed gases with varying mixing ratios at two different pressures (1 and 2 bar). Using the preliminary data obtained from the experiments, a 3D particle mo ...
The non-covalent interactions of neutral π-conjugated cores, pertinent to organic semiconductor materials, are intimately related to their charge transport properties and involve a subtle interplay of dispersion, Pauli repulsion and electrostatic contribut ...
The streamer bursts generated during the initiation and propagation of leaders play an important role in the creation and maintenance of hot discharge channels in air. The most important parameters related to streamer bursts in this respect are the length ...
This paper demonstrates how an already developed finite element code for solving electromagnetic problems can be manipulated and simply extended so as to investigate complicated corona breakdowns. A safe criterion based on the eigenvalue analysis is used i ...
Ionic wind devices or electrostatic fluid accelerators are becoming of increasing interest as tools for thermal management, in particular for semiconductor devices. In this work, we present a numerical model for predicting the performance of such devices; ...
Narrow Bipolar Pulses are generated by bursts of electrical activity in the cloud and these are referred to as Compact Intracloud Discharges (CID) or Narrow Bipolar Events in the current literature. These discharges usually occur in isolation without much ...
The present invention relates to a semiconductor sensor (1) comprising: a source element (17, 19); a drain element (21, 23); a semiconductor channel element (25) between the source element (17, 19) and the drain element (21, 23) for forming an electrically ...
In this work, we present a new device concept for compact high-voltage sensing with high-impedance input port, consisting of an AlGaN/GaN high-electron-mobility channel controlled by trapped carriers generated by a metallic electrode. The high-voltage appl ...